2SK1643 datasheet, PDF - EEWORLD Datasheet

2SK1643: DescriptionTRANSISTOR 5 A, 900 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power; CategoryDiscrete semiconductor The transistor; File Size43KB，9 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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2SK1643 Overview

TRANSISTOR 5 A, 900 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknow
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	900 V
Maximum drain current (Abs) (ID)	5 A
Maximum drain current (ID)	5 A
Maximum drain-source on-resistance	2.8 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	125 W
Maximum pulsed drain current (IDM)	15 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

TOSHIBA

POWER MOSFETs

1Q, 1999

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