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2SD1842-P

Description
Power Bipolar Transistor, 40A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PB, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size42KB,4 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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2SD1842-P Overview

Power Bipolar Transistor, 40A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PB, 3 PIN

2SD1842-P Parametric

Parameter NameAttribute value
Objectid1992499259
Parts packaging codeTO-3PB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)40 A
Collector-emitter maximum voltage100 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)150 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Ordering number:ENN3261A
2SB1232 : PNP Epitaxial Planar Silicon Transistor
2SD1842 : NPN Triple Diffused Planar Silicon Transistor
2SB1232/2SD1842
100V/40A Switching Applications
Applications
· Motor drivers, relay drivers, converters, and other
general high-current switching applications.
Package Dimensions
unit:mm
2022A
[2SB1232/2SD1842]
2.6
3.5
15.6
14.0
3.2
4.8
2.0
Features
· Large current capacity and wide ASO.
· Low saturation voltage.
1.6
2.0
20.0
0.6
1.0
1
0.6
2
3
1.3
1.2
15.0
20.0
( ) : 2SB1232
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Tc=25˚C
5.45
5.45
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
Conditions
1.4
Ratings
(–)110
(–)100
(–)6
(–)40
(–)65
(–)12
3.0
150
150
–55 to +150
Unit
V
V
V
A
A
A
W
W
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
hFE1
hFE2
VCB=(–)100V, IE=0
VEB=(–)5V, IC=0
VCE=(–)2V, IC=(–)4A
VCE=(–)2V, IC=(–)16A
50*
20
Conditions
Ratings
min
typ
max
(–)0.1
(–)0.1
140*
Unit
mA
mA
* : For the h
FE
1 of the 2SB1232/2SD1842, specify at least two ranks in principle.
Rank
hFE
P
50 to 100
Q
70 to 140
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D1003TN (KT)/92098HA (KT)/71095TS/7190MH, TA (KOTO) No.3261–1/4

2SD1842-P Related Products

2SD1842-P 2SD1842-Q 2SB1232-P 2SB1232-Q
Description Power Bipolar Transistor, 40A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PB, 3 PIN Power Bipolar Transistor, 40A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PB, 3 PIN 40A, 100V, PNP, Si, POWER TRANSISTOR, TO-218, TO-3PB, 3 PIN Power Bipolar Transistor, 40A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-3PB, 3 PIN
Objectid 1992499259 1992499260 1417099478 1992499254
Parts packaging code TO-3PB TO-3PB TO-218 TO-3PB
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3 2 3
Reach Compliance Code unknown unknown unknown unknown
Maximum collector current (IC) 40 A 40 A 40 A 40 A
Collector-emitter maximum voltage 100 V 100 V 100 V 100 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 50 70 50 70
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type NPN NPN PNP PNP
Maximum power dissipation(Abs) 150 W 150 W 150 W 150 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
ECCN code EAR99 EAR99 - EAR99

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