INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SD1840
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= 100V(Min)
·High
Current Capability
·Wide
Area of Safe Operation
·Complement
to Type 2SB1230
APPLICATIONS
·Designed
for motor drivers, converters and other general
high-current switching applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Pulse
Base Current-Continuous
Collector Power Dissipation
@ T
a
=25℃
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VALUE
110
UNIT
V
100
6
V
V
15
A
25
5
3
W
100
150
-55~150
℃
℃
A
A
P
C
Collector Power Dissipation
@ T
C
=25℃
T
J
T
stg
Junction Temperature
Storage Temperature Range
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SD1840
TYP.
MAX
UNIT
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= 5mA; R
BE
=
∞
100
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 1mA; I
E
= 0
110
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 1mA; I
C
= 0
6
V
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= 6A; I
B
= 0.6A
B
0.8
V
V
BE
(sat)
I
CBO
Base -Emitter Saturation Voltage
I
C
= 6A; I
B
= 0.6A
B
1.5
V
μA
Collector Cutoff Current
I
EBO
Emitter Cutoff Current
h
FE-1
DC Current Gain
h
FE-2
DC Current Gain
h
FE-1
Classifications
P
50-100
Q
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V
CB
= 100V; I
E
= 0
V
EB
= 5V; I
C
= 0
I
C
= 1.5A; V
CE
= 2V
50
I
C
= 6A; V
CE
= 2V
20
100
100
μA
140
70-140
isc Website：www.iscsemi.cn
2
Power technology
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