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GS8160ZV36BGT-250I

Description
ZBT SRAM, 512KX36, 5.5ns, CMOS, PQFP100, LEAD FREE, TQFP-100
Categorystorage    storage   
File Size586KB,22 Pages
ManufacturerGSI Technology
Websitehttp://www.gsitechnology.com/
Environmental Compliance  
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GS8160ZV36BGT-250I Overview

ZBT SRAM, 512KX36, 5.5ns, CMOS, PQFP100, LEAD FREE, TQFP-100

GS8160ZV36BGT-250I Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerGSI Technology
Parts packaging codeQFP
package instructionLQFP,
Contacts100
Reach Compliance Codecompliant
ECCN code3A991.B.2.B
Maximum access time5.5 ns
Other featuresFLOW-THROUGH OR PIPELINED ARCHITECTURE
JESD-30 codeR-PQFP-G100
JESD-609 codee3
length20 mm
memory density18874368 bit
Memory IC TypeZBT SRAM
memory width36
Humidity sensitivity level3
Number of functions1
Number of terminals100
word count524288 words
character code512000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize512KX36
Package body materialPLASTIC/EPOXY
encapsulated codeLQFP
Package shapeRECTANGULAR
Package formFLATPACK, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum seat height1.6 mm
Maximum supply voltage (Vsup)2 V
Minimum supply voltage (Vsup)1.6 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfacePURE MATTE TIN
Terminal formGULL WING
Terminal pitch0.65 mm
Terminal locationQUAD
Maximum time at peak reflow temperatureNOT SPECIFIED
width14 mm
Preliminary
GS8160ZV18/36BT-250/200/150
100-Pin TQFP
Commercial Temp
Industrial Temp
Features
• NBT (No Bus Turn Around) functionality allows zero wait
read-write-read bus utilization; Fully pin-compatible with
both pipelined and flow through NtRAM™, NoBL™ and
ZBT™ SRAMs
• 1.8 V +10%/–10% core power supply
• 1.8 V I/O supply
• User-configurable Pipeline and Flow Through mode
• LBO pin for Linear or Interleave Burst mode
• Pin compatible with 2M, 4M, and 8M devices
• Byte write operation (9-bit Bytes)
• 3 chip enable signals for easy depth expansion
• ZZ Pin for automatic power-down
• JEDEC-standard 100-lead TQFP package
• Pb-Free 100-lead TQFP package available
18Mb Pipelined and Flow Through
Synchronous NBT SRAM
250 MHz–150 MHz
1.8 V V
DD
1.8 V I/O
Because it is a synchronous device, address, data inputs, and
read/ write control inputs are captured on the rising edge of the
input clock. Burst order control (LBO) must be tied to a power
rail for proper operation. Asynchronous inputs include the
Sleep mode enable (ZZ) and Output Enable. Output Enable can
be used to override the synchronous control of the output
drivers and turn the RAM's output drivers off at any time.
Write cycles are internally self-timed and initiated by the rising
edge of the clock input. This feature eliminates complex off-
chip write pulse generation required by asynchronous SRAMs
and simplifies input signal timing.
The GS8160ZV18/36BT may be configured by the user to
operate in Pipeline or Flow Through mode. Operating as a
pipelined synchronous device, meaning that in addition to the
rising edge triggered registers that capture input signals, the
device incorporates a rising-edge-triggered output register. For
read cycles, pipelined SRAM output data is temporarily stored
by the edge triggered output register during the access cycle
and then released to the output drivers at the next rising edge of
clock.
The GS8160ZV18/36BT is implemented with GSI's high
performance CMOS technology and is available in a JEDEC-
standard 100-pin TQFP package.
Functional Description
The GS8160ZV18/36BT is an 18Mbit Synchronous Static
SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or
other pipelined read/double late write or flow through read/
single late write SRAMs, allow utilization of all available bus
bandwidth by eliminating the need to insert deselect cycles
when the device is switched from read to write cycles.
Parameter Synopsis
-250
Pipeline
3-1-1-1
t
KQ
tCycle
Curr
(x18)
Curr
(x32/x36)
t
KQ
tCycle
Curr
(x18)
Curr
(x32/x36)
2.5
4.0
280
330
5.5
5.5
210
240
-200
3.0
5.0
230
270
6.5
6.5
185
205
-150
3.8
6.7
185
210
7.5
7.5
170
190
Unit
ns
ns
mA
mA
ns
ns
mA
mA
Flow Through
2-1-1-1
Rev: 1.00 8/2004
1/22
© 2004, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

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