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2SC3254-S

Description
7A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size37KB,4 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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2SC3254-S Overview

7A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN

2SC3254-S Parametric

Parameter NameAttribute value
Objectid1481156574
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknown
Maximum collector current (IC)7 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)140
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power consumption environment35 W
Maximum power dissipation(Abs)35 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
VCEsat-Max0.4 V
Ordering number : EN1200E
2SA1290 / 2SC3254
SANYO Semiconductors
DATA SHEET
PNP / NPN Epitaxial Planar Silicon Transistors
2SA1290 / 2SC3254
Applications
60V / 7A High-Speed Switching
Applications
Various inductance lamp drivers for electrical equipment.
Inverters, converters (flash, fluorescent lamp lighting circuit).
Power amp (high power car stereo, motor controller).
High-speed switching (switching regulator, driver).
Features
Low saturation voltage.
Excellent current dependence of hFE.
Short switching time.
Specifications
( ) : 2SA1290
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25°C
Conditions
Ratings
(--)80
(--)60
(-
-)5
(-
-)7
(--)10
1.75
35
150
--55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
hFE
Conditions
VCB=(--)40V, IE=0A
VEB=(--)4V, IC=0A
VCE=(--)2V, IC=(--)1A
70*
Ratings
min
typ
max
(--)0.1
(--)0.1
280*
Unit
mA
mA
Continued on next page.
*
: The 2SA1290/2SC3254 are classified by 1A hFE as follows :
Rank
hFE
Q
70 to 140
R
100 to 200
S
140 to 280
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
83006 MS IM TC-00000110 / 72006FA MS IM TC-00000063 / 73102TN (KT) / 71598HA (KT) / D051MH (KOTO) No.1200-1/4

2SC3254-S Related Products

2SC3254-S 2SC3254-Q 2SC3254-R 2SA1290-Q 2SA1290-R
Description 7A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN 7A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN 7A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN 7A, 60V, PNP, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN 7A, 60V, PNP, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN
Objectid 1481156574 1481156568 1481156571 1481156448 1481156451
Parts packaging code TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3 3 3 3
Reach Compliance Code unknown unknown unknown unknown unknown
Maximum collector current (IC) 7 A 7 A 7 A 7 A 7 A
Collector-emitter maximum voltage 60 V 60 V 60 V 60 V 60 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 140 70 100 70 100
JEDEC-95 code TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1 1 1
Number of terminals 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type NPN NPN NPN PNP PNP
Maximum power consumption environment 35 W 35 W 35 W 35 W 35 W
Maximum power dissipation(Abs) 35 W 35 W 35 W 35 W 35 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz
VCEsat-Max 0.4 V 0.4 V 0.4 V 0.4 V 0.4 V

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