2SA1290-Q datasheet, PDF - EEWORLD Datasheet

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2SA1290-Q: Description7A, 60V, PNP, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size37KB，4 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

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2SA1290-Q Overview

7A, 60V, PNP, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN

2SA1290-Q Parametric

Parameter Name	Attribute value
Objectid	1481156448
Parts packaging code	TO-220AB
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknown
Maximum collector current (IC)	7 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	70
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	PNP
Maximum power consumption environment	35 W
Maximum power dissipation(Abs)	35 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
VCEsat-Max	0.4 V

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Ordering number : EN1200E

2SA1290 / 2SC3254

SANYO Semiconductors

DATA SHEET

PNP / NPN Epitaxial Planar Silicon Transistors

2SA1290 / 2SC3254

Applications

•

60V / 7A High-Speed Switching

Applications

Various inductance lamp drivers for electrical equipment.

Inverters, converters (flash, fluorescent lamp lighting circuit).

Power amp (high power car stereo, motor controller).

High-speed switching (switching regulator, driver).

Features

•

Low saturation voltage.

Excellent current dependence of hFE.

Short switching time.

Specifications

( ) : 2SA1290

Absolute Maximum Ratings

at Ta=25°C

Parameter

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Collector Current (Pulse)

Collector Dissipation

Junction Temperature

Storage Temperature

Symbol

VCBO

VCEO

VEBO

ICP

Tstg

Tc=25°C

Conditions

Ratings

(--)80

(--)60

-)5

-)7

(--)10

1.75

150

--55 to +150

Unit

°C

Electrical Characteristics

at Ta=25°C

Parameter

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Symbol

ICBO

IEBO

hFE

Conditions

VCB=(--)40V, IE=0A

VEB=(--)4V, IC=0A

VCE=(--)2V, IC=(--)1A

70*

Ratings

min

typ

max

(--)0.1

280*

Unit

Continued on next page.

: The 2SA1290/2SC3254 are classified by 1A hFE as follows :

Rank

hFE

70 to 140

100 to 200

140 to 280

Any and all SANYO Semiconductor products described or contained herein do not have specifications

that can handle applications that require extremely high levels of reliability, such as life-support systems,

aircraft's control systems, or other applications whose failure can be reasonably expected to result in

serious physical and/or material damage. Consult with your SANYO Semiconductor representative

nearest you before usingany SANYO Semiconductor products described or contained herein in such

applications.

SANYO Semiconductor assumes no responsibility for equipment failures that result from using products

at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition

ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor

products described or contained herein.

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

83006 MS IM TC-00000110 / 72006FA MS IM TC-00000063 / 73102TN (KT) / 71598HA (KT) / D051MH (KOTO) No.1200-1/4

2SA1290 / 2SC3254

2.0

1.75

PC -- Ta

2SA1290 / 2SC3254

PC -- Tc

2SA1290 / 2SC3254

Collector Dissipation, PC -- W

1.5

1.0

sin

0.5

100

120

140

160

100

120

140

160

Ambient Temperature, Ta --

°C

ITR03193

Case Temperature, Tc --

°C

ITR03194

Specifications of any and all SANYO Semiconductor products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state,

and are not guarantees of the performance, characteristics, and functions of the described products

as mounted in the customer's products or equipment. To verify symptoms and states that cannot be

evaluated in an independent device, the customer should always evaluate and test devices mounted

in the customer's products or equipment.

SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any

and all semiconductor products fail with some probability. It is possible that these probabilistic failures

could give rise to accidents or events that could endanger human lives, that could give rise to smoke or

fire, or that could cause damage to other property. When designing equipment, adopt safety measures

so that these kinds of accidents or events cannot occur. Such measures include but are not limited to

protective circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO Semiconductor products (including technical data,services) described

or contained herein are controlled under any of applicable local export control laws and regulations, such

products must not be exported without obtaining the export license from the authorities concerned in

accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic

or mechanical, including photocopying and recording, or any information storage or retrieval system,

or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"

for the SANYO Semiconductor product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only; it is not

guaranteed for volume production. SANYO Semiconductor believes information herein is accurate

and reliable, but no guarantees are made or implied regarding its use or any infringements of

intellectual property rights or other rights of third parties.

This catalog provides information as of August, 2006. Specifications and information herein are subject

to change without notice.

PS No.1200-4/4

2SA1290-Q Related Products

	2SA1290-Q	2SC3254-Q	2SC3254-R	2SC3254-S	2SA1290-R
Description	7A, 60V, PNP, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN	7A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN	7A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN	7A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN	7A, 60V, PNP, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN
Objectid	1481156448	1481156568	1481156571	1481156574	1481156451
Parts packaging code	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220AB
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Contacts	3	3	3	3	3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
Maximum collector current (IC)	7 A	7 A	7 A	7 A	7 A
Collector-emitter maximum voltage	60 V	60 V	60 V	60 V	60 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	70	70	100	140	100
JEDEC-95 code	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220AB
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
Number of components	1	1	1	1	1
Number of terminals	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	PNP	NPN	NPN	NPN	PNP
Maximum power consumption environment	35 W	35 W	35 W	35 W	35 W
Maximum power dissipation(Abs)	35 W	35 W	35 W	35 W	35 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz
VCEsat-Max	0.4 V	0.4 V	0.4 V	0.4 V	0.4 V

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