DATA SHEET
SILICON TRANSISTORS
2SC2885, 2946, 2946(1)
NPN SILICON
EPITAXIAL
TRANSISTOR
FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING
The 2SC2885, 2946, and 2946(1) are high-voltage high-speed switching power transistors featuring a small
package (MP-3) which is suitable for high-density mounting. These transistors are ideal for drivers in DC/DC
converters and switching regulators.
There are three types of transistors selectable according to the reliability requirments: 2SC2946 and 2946(1) for
industrial use, 2SC2885 for general use. The 2SC2946(1) is produced with leads so as to enable mounting directly in
a hybrid IC.
QUALITY GRADES
• Standard
Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC
Corporation to know the specification of quality grade on the devices and its recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
°
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*
I
B(DC)
P
T
(Tc = 25°C)
P
T
(Ta = 25°C)
T
j
T
stg
Ratings
330
200
7.0
2.0
4.0
1.0
15
600
150
−55
to +150
Unit
V
V
V
A
A
A
W
mW
°C
°C
* PW
≤
300
µ
s, duty cycle
≤
10%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16135EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
2SC2885, 2946, 2946(1)
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
°
Parameter
Collector to emitter voltage
Collector to emitter voltage
Symbol
V
CEO(SUS)
V
CEX(SUS)
Conditions
I
C
= 1.0 A, I
B
= 0.1 A, L = 500
µ
H*
I
C
= 1.0 A, I
B1
=
−I
B2
= 0.1 A*
Ta = 125°C, L = 180
µ
H, clamped
V
CB
= 250 V, I
E
= 0
V
CE
= 250 V, V
BE(OFF)
=
−1.5
V
V
CE
= 250 V, V
BE(OFF)
=
−1.5
V, Ta = 125°C
V
EB
= 5.0 V, I
C
= 0
V
CE
= 5.0 V, I
C
= 0.1 A*
V
CE
= 5.0 V, I
C
= 1.0 A*
I
C
= 1.0 A, I
B
= 0.1 A*
I
C
= 1.0 A, I
B
= 0.1 A*
I
C
= 1.0 A, R
L
= 100
Ω
I
B1
=
−I
B2
= 0.1 A, V
CC
≅
100 V
Refer to the test circuit.
Fall time
t
f
1.0
20
15
1.0
1.5
1.0
2.0
V
V
60
MIN.
200
200
TYP.
MAX.
Unit
V
V
Collector cutoff current
Collector cutoff current
Collector cutoff current
Emitter cutoff current
DC current gain
I
CBO
I
CEX1
I
CEX2
I
EBO
h
FE1
h
FE2
10
10
1.0
1.0
160
µ
A
µ
A
mA
µ
A
Collector saturation voltage
Base saturation voltage
Turn-on time
Storage time
V
CE(sat)
V
BE(sat)
t
on
t
stg
µ
s
µ
s
µ
s
* Pulse test PW
≤
350
µ
s, duty cycle
≤
2%
h
FE
CLASSIFICATION
Marking
h
FE1
N
20 to 50
M
30 to 70
L
50 to 100
K
80 to 160
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base
2. Collector
3. Emitter
4. Collector (fin)
2
Data Sheet D16135EJ2V0DS
2SC2885, 2946, 2946(1)
TYPICAL CHARACTERISTICS (Ta = 25°C)
°
Total Power Dissipation P
T
(W)
???
Without
heatsink
Ambient Temperature T
a
(
°
C)
Collector Current I
C
(mA)
With infinite heatsink
Collector to Emitter Voltage V
CE
(V)
Case Temperature T
C
(
°
C)
Transient Thermal Resistance R
th(j-a)
(
°
C/W)
I
C
Derating dT (%)
Pulse Width PW (ms)
Pulse test
Collector Current I
C
(A)
Collector to Emitter Voltage V
CE
(V)
DC Current Gain h
FE
Collector Current I
C
(mA)
Data Sheet D16135EJ2V0DS
3
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