The documentation and process conversion measures
necessary to comply with this document shall be
completed by 6 February 2014.
INCH-POUND
MIL-PRF-19500/660E
6 December 2013
SUPERSEDING
MIL-PRF-19500/660D
11 February 2013
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED
TRANSISTOR, P-CHANNEL SILICON, TYPES 2N7424, 2N7425, AND 2N7426,
JANTXVR, JANTXVF, JANSR, AND JANSF
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and
MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for a P-channel, enhancement-mode,
MOSFET, radiation hardened, power transistor. Two levels of product assurance are provided for each device type
as specified in
MIL-PRF-19500,
with avalanche energy maximum rating (E
AS
) and maximum avalanche current (I
AS
).
See
6.5
for JANHC and JANKC die versions.
1.2 Physical dimensions. See
figure 1,
TO-254AA.
1.3 Maximum ratings. Unless otherwise specified, T
A
= +25 C.
Type
P
T
(1)
T
C
=
+25°C
W
2N7424
2N7425
2N7426
250
250
250
P
T
T
A
=
+25°C
W
3.0
3.0
3.0
R
θJC
(2)
V
DS
V
DG
V
GS
I
D1
(3) (4)
T
C
=+25°C
I
D2
(3)(4)
T
C
=
+100°C
A dc
-30
-24
-17
I
S
I
DM
(5)
T
J
and
T
STG
°C
-55
to
+150
o
°C/W
0.50
0.50
0.50
V dc
-60
-100
-200
V dc
-60
-100
-200
V dc
±20
±20
±20
A dc
-35
-35
-27
A dc
-35
-35
-27
A (pk)
-140
-140
-108
(1)
(2)
(3)
Derate linearly 2.0 W/°C for T
C
> +25°C.
See
figure 2,
thermal impedance curves.
The following formula derives the maximum theoretical I
D
limit. I
D
is limited by package and internal
construction.
T
JM
- T
C
I
D
=
(
R
θ
JC
)
x
(
R
DS
( on ) at T
JM
)
See
figure 3,
maximum drain current graphs.
I
DM
= 4 x I
D1
as calculated in note 3.
(4)
(5)
Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dla.mil.
Since contact
information can change, you may want to verify the currency of this address information using the ASSIST
Online database at
https://assist.dla.mil.
AMSC N/A
FSC 5961
MIL-PRF-19500/660E
1.4 Primary electrical characteristics at T
C
= +25°C.
Type
Min
V
(BR)DSS
V
GS
= 0
I
D
= -1.0
mA dc
V dc
2N7424
2N7425
2N7426
-60
-100
-200
V
GS(TH)1
V
DS
≥
V
GS
I
D
= -1.0 mA dc
Max I
DSS1
V
GS
= 0
V
DS
= 80
percent of
rated V
DS
µA
dc
-25
-25
-25
Max r
DS(on)
(1)
V
GS
= -12V
I
D
= I
D2
T
J
= +25°C
Ω
0.050
0.073
0.160
T
J
= +150°C
Ω
0.105
0.155
0.340
mJ
500
500
500
E
AS
V dc
Min
Max
-2.0
-4.0
-2.0
-4.0
-2.0
-4.0
(1) Pulsed (see
4.5.1).
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500
-
Semiconductor Devices, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750
-
Test Methods for Semiconductor Devices.
* (Copies of these documents are available online at
http://quicksearch.dla.mil
or
https://assist.dla.mil/
or from the
Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the
text of this document and the references cited herein, the text of this document takes precedence. Nothing in this
document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
2
MIL-PRF-19500/660E
Dimensions
Symbol
Inches
Min
BL
CH
LD
LL
LO
LS
MHD
MHO
TL
TT
TW
Term 1
Term 2
Term 3
.535
.249
.035
.510
Max
.545
.260
.045
.570
Millimeters
Min
13.59
6.32
0.89
12.95
Max
13.84
6.60
1.14
14.48
.150 BSC
.150 BSC
.139
.665
.790
.040
.535
.149
.685
.800
.050
.545
3.81 BSC
3.81 BSC
3.53
16.89
20.07
1.02
13.59
Drain
Source
Gate
3.78
17.40
20.32
1.27
13.84
NOTES:
1.
2.
3.
4.
5.
Dimensions are in inches.
Millimeters are given for general information only.
Refer to applicable symbol list.
In accordance with ASME Y14.5M, diameters are equivalent to
φx
symbology.
All terminals are isolated from case.
FIGURE 1. Physical dimensions for TO-254AA.
3
MIL-PRF-19500/660E
3. REQUIREMENTS
3.1 General. The individual item requirements shall be as specified in
MIL-PRF-19500
and as modified herein.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)
before contract award (see
4.2
and
6.3).
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in
MIL-PRF-19500
and as follows:
I
AS
nC
Rated avalanche current, nonrepetitive
nano coulomb.
3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in
MIL-PRF-19500,
and
figure 1
(TO-254AA) herein. Methods used for electrical isolation of the terminals shall employ
materials that contain a minimum of 90 percent Al
2
O
3
(ceramic).
3.4.1 Lead material and finish. Lead material shall be Kovar or Alloy 52; a copper core or plated core is permitted.
Lead finish shall be solderable as defined in
MIL-PRF-19500, MIL-STD-750,
and herein. Where a choice of terminal
finish is desired, it shall be specified in the acquisition document (see
6.2).
3.5 Electrostatic discharge protection. The devices covered by this specification require electrostatic discharge
protection.
3.5.1 Handling. MOS devices must be handled with certain precautions to avoid damage due to the accumulation
of static charge. However, the following handling practices are recommended (see
3.5).
a.
b.
c.
d.
e.
f.
g.
Devices should be handled on benches with conductive handling devices.
Ground test equipment, tools, and personnel handling devices.
Do not handle devices by the leads.
Store devices in conductive foam or carriers.
Avoid use of plastic, rubber, or silk in MOS areas.
Maintain relative humidity above 50 percent if practical.
Care should be exercised during test and troubleshooting to apply not more than maximum rated voltage to
any lead.
Gate must be terminated to source, R
≤
or 100 kΩ, whenever bias voltage is applied drain to source.
h.
3.6 Marking. Marking shall be in accordance with
MIL-PRF-19500.
At the option of the manufacturer, marking of
the country of origin may be omitted from the body of the transistor but shall be retained on the initial container.
3.7 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in
1.3, 1.4,
and
table I.
3.8 Electrical test requirements. The electrical test requirements shall be as specified in
table I.
3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4
MIL-PRF-19500/660E
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a.
b.
c.
Qualification inspection (see
4.2).
Screening (see
4.3).
Conformance inspection (see
4.4
and
tables I
and
II).
4.2 Qualification inspection. Qualification inspection shall be in accordance with
MIL-PRF-19500.
4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In
case qualification was awarded to a prior revision of the specification sheet that did not request the performance of
table III
tests, the tests specified in
table III
herein that were not performed in the prior revision shall be performed on
the first inspection lot of this revision to maintain qualification.
4.2.1.1 Single event effects (SEE). SEE shall be performed at initial qualification and after process or design
changes which may affect radiation hardness (see
table III
and
table IV).
Upon qualification, manufacturers shall
provide the verification test conditions from section 5 of method 1080 of
MIL-STD-750
that were used to qualify the
device for inclusion into section 6 of the slash sheet. End-point measurements shall be in accordance with
table II.
SEE characterization data shall be made available upon request of the qualifying or acquiring activity.
5
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