IC EEPROM 256KBIT 200NS 32CLCC
Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | incompatible |
Maker | Microchip |
package instruction | CERAMIC, LCC-32 |
Reach Compliance Code | unknown |
Maximum access time | 200 ns |
Other features | AUTOMATIC WRITE |
command user interface | NO |
Data polling | YES |
Durability | 100000 Write/Erase Cycles |
JESD-30 code | R-CQCC-N32 |
JESD-609 code | e0 |
length | 13.97 mm |
memory density | 262144 bit |
Memory IC Type | EEPROM |
memory width | 8 |
Number of functions | 1 |
Number of terminals | 32 |
word count | 32768 words |
character code | 32000 |
Operating mode | ASYNCHRONOUS |
Maximum operating temperature | 125 °C |
Minimum operating temperature | -55 °C |
organize | 32KX8 |
Output characteristics | 3-STATE |
Package body material | CERAMIC, METAL-SEALED COFIRED |
encapsulated code | QCCN |
Encapsulate equivalent code | LCC32,.45X.55 |
Package shape | RECTANGULAR |
Package form | CHIP CARRIER |
page size | 64 words |
Parallel/Serial | PARALLEL |
Peak Reflow Temperature (Celsius) | 225 |
power supply | 5 V |
Programming voltage | 5 V |
Certification status | Not Qualified |
Filter level | MIL-STD-883 Class C |
Maximum seat height | 2.54 mm |
Maximum standby current | 0.0003 A |
Maximum slew rate | 0.05 mA |
Maximum supply voltage (Vsup) | 5.5 V |
Minimum supply voltage (Vsup) | 4.5 V |
Nominal supply voltage (Vsup) | 5 V |
surface mount | YES |
technology | CMOS |
Temperature level | MILITARY |
Terminal surface | TIN LEAD |
Terminal form | NO LEAD |
Terminal pitch | 1.27 mm |
Terminal location | QUAD |
Maximum time at peak reflow temperature | 30 |
switch bit | YES |
width | 11.43 mm |
Maximum write cycle time (tWC) | 10 ms |