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AT28C256E-20LM/883

Description
IC EEPROM 256KBIT 200NS 32CLCC
Categorystorage    storage   
File Size531KB,25 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
Download Datasheet Parametric View All

AT28C256E-20LM/883 Overview

IC EEPROM 256KBIT 200NS 32CLCC

AT28C256E-20LM/883 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerMicrochip
package instructionCERAMIC, LCC-32
Reach Compliance Codeunknown
Maximum access time200 ns
Other featuresAUTOMATIC WRITE
command user interfaceNO
Data pollingYES
Durability100000 Write/Erase Cycles
JESD-30 codeR-CQCC-N32
JESD-609 codee0
length13.97 mm
memory density262144 bit
Memory IC TypeEEPROM
memory width8
Number of functions1
Number of terminals32
word count32768 words
character code32000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize32KX8
Output characteristics3-STATE
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeQCCN
Encapsulate equivalent codeLCC32,.45X.55
Package shapeRECTANGULAR
Package formCHIP CARRIER
page size64 words
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)225
power supply5 V
Programming voltage5 V
Certification statusNot Qualified
Filter levelMIL-STD-883 Class C
Maximum seat height2.54 mm
Maximum standby current0.0003 A
Maximum slew rate0.05 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTIN LEAD
Terminal formNO LEAD
Terminal pitch1.27 mm
Terminal locationQUAD
Maximum time at peak reflow temperature30
switch bitYES
width11.43 mm
Maximum write cycle time (tWC)10 ms

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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