FS16UM-5 datasheet, PDF - EEWORLD Datasheet

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FS16UM-5: DescriptionPower Field-Effect Transistor, 16A I(D), 250V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size58KB，1 Pages; ManufacturerPOWEREX; Websitehttp://www.pwrx.com/Home.aspx

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FS16UM-5 Overview

Power Field-Effect Transistor, 16A I(D), 250V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

FS16UM-5 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	POWEREX
Parts packaging code	SFM
package instruction	TO-220, 3 PIN
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	DRAIN
Configuration	SINGLE
Minimum drain-source breakdown voltage	250 V
Maximum drain current (Abs) (ID)	16 A
Maximum drain current (ID)	16 A
Maximum drain-source on-resistance	0.25 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	125 W
Maximum power dissipation(Abs)	125 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON

FS16UM-5 Related Products

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Description	Power Field-Effect Transistor, 16A I(D), 250V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN	Power Field-Effect Transistor, 20A I(D), 250V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN	Power Field-Effect Transistor, 16A I(D), 250V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220FN, 3 PIN	Power Field-Effect Transistor, 10A I(D), 250V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN	Power Field-Effect Transistor, 5A I(D), 250V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN	Power Field-Effect Transistor, 10A I(D), 250V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220FN, 3 PIN	Power Field-Effect Transistor, 20A I(D), 250V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220FN, 3 PIN	Power Field-Effect Transistor, 12A I(D), 250V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220FN, 3 PIN	Power Field-Effect Transistor, 12A I(D), 250V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	POWEREX	POWEREX	POWEREX	POWEREX	POWEREX	POWEREX	POWEREX	POWEREX	POWEREX
Parts packaging code	SFM	SFM	TO-220FN	SFM	TO-220S	TO-220FN	TO-220FN	TO-220FN	SFM
package instruction	TO-220, 3 PIN	TO-220, 3 PIN	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	SMALL OUTLINE, R-PSSO-G2	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	TO-220, 3 PIN
Contacts	3	3	3	3	3	3	3	3	3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Shell connection	DRAIN	DRAIN	ISOLATED	-	DRAIN	ISOLATED	ISOLATED	ISOLATED	-
Configuration	SINGLE	SINGLE	SINGLE	-	SINGLE	SINGLE	SINGLE	SINGLE	-
Minimum drain-source breakdown voltage	250 V	250 V	250 V	-	250 V	250 V	250 V	250 V	-
Maximum drain current (Abs) (ID)	16 A	20 A	16 A	-	5 A	10 A	20 A	12 A	-
Maximum drain current (ID)	16 A	20 A	16 A	-	5 A	10 A	20 A	12 A	-
Maximum drain-source on-resistance	0.25 Ω	0.19 Ω	0.25 Ω	-	1.3 Ω	0.52 Ω	0.19 Ω	0.4 Ω	-
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	-	R-PSSO-G2	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	-
JESD-609 code	e0	e0	e0	-	e0	e0	e0	e0	-
Number of components	1	1	1	-	1	1	1	1	-
Number of terminals	3	3	3	-	2	3	3	3	-
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	-	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	-
Maximum operating temperature	150 °C	150 °C	150 °C	-	150 °C	150 °C	150 °C	150 °C	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	-	SMALL OUTLINE	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	-
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	-	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	-
Maximum power consumption environment	125 W	150 W	35 W	-	60 W	35 W	40 W	35 W	-
Maximum power dissipation(Abs)	125 W	150 W	35 W	-	60 W	35 W	40 W	35 W	-
Certification status	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-
surface mount	NO	NO	NO	-	YES	NO	NO	NO	-
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	-	GULL WING	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	-
Terminal location	SINGLE	SINGLE	SINGLE	-	SINGLE	SINGLE	SINGLE	SINGLE	-
transistor applications	SWITCHING	SWITCHING	SWITCHING	-	SWITCHING	SWITCHING	SWITCHING	SWITCHING	-
Transistor component materials	SILICON	SILICON	SILICON	-	SILICON	SILICON	SILICON	SILICON	-

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