Power Field-Effect Transistor, 5A I(D), 250V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | POWEREX |
| Parts packaging code | TO-220S |
| package instruction | SMALL OUTLINE, R-PSSO-G2 |
| Contacts | 3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Shell connection | DRAIN |
| Configuration | SINGLE |
| Minimum drain-source breakdown voltage | 250 V |
| Maximum drain current (Abs) (ID) | 5 A |
| Maximum drain current (ID) | 5 A |
| Maximum drain-source on-resistance | 1.3 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PSSO-G2 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Polarity/channel type | N-CHANNEL |
| Maximum power consumption environment | 60 W |
| Maximum power dissipation(Abs) | 60 W |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | GULL WING |
| Terminal location | SINGLE |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| FS5VS-5 | FS20UM-5 | FS16KM-5 | FS10UM-5 | FS10KM-5 | FS16UM-5 | FS20KM-5 | FS12KM-5 | FS12UM-5 | |
|---|---|---|---|---|---|---|---|---|---|
| Description | Power Field-Effect Transistor, 5A I(D), 250V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN | Power Field-Effect Transistor, 20A I(D), 250V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Power Field-Effect Transistor, 16A I(D), 250V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220FN, 3 PIN | Power Field-Effect Transistor, 10A I(D), 250V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Power Field-Effect Transistor, 10A I(D), 250V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220FN, 3 PIN | Power Field-Effect Transistor, 16A I(D), 250V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Power Field-Effect Transistor, 20A I(D), 250V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220FN, 3 PIN | Power Field-Effect Transistor, 12A I(D), 250V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220FN, 3 PIN | Power Field-Effect Transistor, 12A I(D), 250V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible |
| Maker | POWEREX | POWEREX | POWEREX | POWEREX | POWEREX | POWEREX | POWEREX | POWEREX | POWEREX |
| Parts packaging code | TO-220S | SFM | TO-220FN | SFM | TO-220FN | SFM | TO-220FN | TO-220FN | SFM |
| package instruction | SMALL OUTLINE, R-PSSO-G2 | TO-220, 3 PIN | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | TO-220, 3 PIN | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | TO-220, 3 PIN |
| Contacts | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Shell connection | DRAIN | DRAIN | ISOLATED | - | ISOLATED | DRAIN | ISOLATED | ISOLATED | - |
| Configuration | SINGLE | SINGLE | SINGLE | - | SINGLE | SINGLE | SINGLE | SINGLE | - |
| Minimum drain-source breakdown voltage | 250 V | 250 V | 250 V | - | 250 V | 250 V | 250 V | 250 V | - |
| Maximum drain current (Abs) (ID) | 5 A | 20 A | 16 A | - | 10 A | 16 A | 20 A | 12 A | - |
| Maximum drain current (ID) | 5 A | 20 A | 16 A | - | 10 A | 16 A | 20 A | 12 A | - |
| Maximum drain-source on-resistance | 1.3 Ω | 0.19 Ω | 0.25 Ω | - | 0.52 Ω | 0.25 Ω | 0.19 Ω | 0.4 Ω | - |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | - |
| JESD-30 code | R-PSSO-G2 | R-PSFM-T3 | R-PSFM-T3 | - | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | - |
| JESD-609 code | e0 | e0 | e0 | - | e0 | e0 | e0 | e0 | - |
| Number of components | 1 | 1 | 1 | - | 1 | 1 | 1 | 1 | - |
| Number of terminals | 2 | 3 | 3 | - | 3 | 3 | 3 | 3 | - |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | - | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | - |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | - | 150 °C | 150 °C | 150 °C | 150 °C | - |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | - |
| Package form | SMALL OUTLINE | FLANGE MOUNT | FLANGE MOUNT | - | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | - |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | - | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | - |
| Maximum power consumption environment | 60 W | 150 W | 35 W | - | 35 W | 125 W | 40 W | 35 W | - |
| Maximum power dissipation(Abs) | 60 W | 150 W | 35 W | - | 35 W | 125 W | 40 W | 35 W | - |
| Certification status | Not Qualified | Not Qualified | Not Qualified | - | Not Qualified | Not Qualified | Not Qualified | Not Qualified | - |
| surface mount | YES | NO | NO | - | NO | NO | NO | NO | - |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | - |
| Terminal form | GULL WING | THROUGH-HOLE | THROUGH-HOLE | - | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | - |
| Terminal location | SINGLE | SINGLE | SINGLE | - | SINGLE | SINGLE | SINGLE | SINGLE | - |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | - | SWITCHING | SWITCHING | SWITCHING | SWITCHING | - |
| Transistor component materials | SILICON | SILICON | SILICON | - | SILICON | SILICON | SILICON | SILICON | - |
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