MPSA65D75Z datasheet, PDF - EEWORLD Datasheet

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MPSA65D75Z: DescriptionSmall Signal Bipolar Transistor, 1.2A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92; CategoryDiscrete semiconductor The transistor; File Size49KB，2 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/; Environmental Compliance

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MPSA65D75Z Overview

Small Signal Bipolar Transistor, 1.2A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92

MPSA65D75Z Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Fairchild
package instruction	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	1.2 A
Collector-emitter maximum voltage	30 V
Configuration	DARLINGTON
Minimum DC current gain (hFE)	20000
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.625 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz

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MPSA65D75Z Related Products

	MPSA65D75Z	MPSA65D74Z	MPSA65D27Z	MPSA65J05Z	MPSA65J18Z
Description	Small Signal Bipolar Transistor, 1.2A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92	Small Signal Bipolar Transistor, 1.2A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92	Small Signal Bipolar Transistor, 1.2A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92	Small Signal Bipolar Transistor, 1.2A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, 3 PIN	Small Signal Bipolar Transistor, 1.2A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, 3 PIN
Maker	Fairchild	Fairchild	Fairchild	Fairchild	Fairchild
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	compliant	unknown	compliant	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	1.2 A	1.2 A	1.2 A	1.2 A	1.2 A
Collector-emitter maximum voltage	30 V	30 V	30 V	30 V	30 V
Configuration	DARLINGTON	DARLINGTON	DARLINGTON	DARLINGTON	DARLINGTON
Minimum DC current gain (hFE)	20000	20000	20000	20000	20000
JESD-30 code	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3
Number of components	1	1	1	1	1
Number of terminals	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	PNP	PNP	PNP	PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz
JEDEC-95 code	TO-92	TO-92	TO-92	-	-

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