NE6510379A datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> NE6510379A

NE6510379A: DescriptionRF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Hetero-junction FET, 79A, 4 PIN; CategoryDiscrete semiconductor The transistor; File Size66KB，8 Pages; ManufacturerNEC Electronics

Download Datasheet Parametric Compare View All

NE6510379A Overview

RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Hetero-junction FET, 79A, 4 PIN

NE6510379A Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	NEC Electronics
package instruction	79A, 4 PIN
Reach Compliance Code	compliant
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	6 V
Maximum drain current (ID)	4.2 A
FET technology	HETERO-JUNCTION
highest frequency band	L BAND
JESD-30 code	R-CQMW-F4
JESD-609 code	e0
Number of components	1
Number of terminals	4
Operating mode	DEPLETION MODE
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	MICROWAVE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	FLAT
Terminal location	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	GALLIUM ARSENIDE

Preview

Download Datasheet

View All

PRELIMINARY DATA SHEET

N-CHANNEL GaAs HJ-FET

NE6510379A

3 W L-BAND POWER GaAs HJ-FET

DESCRIPTION

The NE6510379A is a 3 W GaAs HJ-FET designed for middle power transmitter applications for mobile

communication systems. It is capable of delivering 3 W of output power with high linear gain, high efficiency and

excellent distortion.

Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.

FEATURES

• GaAs HJ-FET Structure

• High Output Power : P

= +35 dBm typ. @V

= 3.5 V, I

Dset

= 200 mA, f = 900 MHz, Pin = +24 dBm, 1/duty

= +32.5 dBm typ. @V

= 3.5 V, I

Dset

= 200 mA, f = 1.9 GHz, Pin = +26 dBm, 1/3 duty

• High Linear Gain : G

= 13 dB typ. @V

= 3.5 V, I

Dset

= 200 mA, f = 900 MHz, Pin = 0 dBm, 1/3 duty

= 8 dB typ. @V

= 3.5 V, I

Dset

= 200 mA, f = 1.9 GHz, Pin = 0 dBm, 1/3 duty

• High Power Added Efficiency : 58% typ. @V

= 3.5 V, I

Dset

= 200 mA, f = 900 MHz, Pin = +24 dBm, 1/3 duty

52% typ. @V

= 3.5 V, I

Dset

= 200 mA, f = 1.9 GHz, Pin = +26 dBm, 1/3 duty

ORDERING INFORMATION

Part Number

NE6510379A-T1

79A

Package

Supplying Form

12 mm tape width, 1 kpcs/reel

Remark

To order evaluation samples, please contact your nearby sales office.

Part number for sample order: NE6510379A

ABSOLUTE MAXIMUM RATINGS (T

= 25°C)

Operation in excess of any one of these parameters may result in permanent damage.

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current

Gate Forward Current

Gate Reverse Current

Total Power Dissipation

Channel Temperature

Storage Temperature

Symbol

GSO

stg

Ratings

–4

4.2

150

–65 to +150

Unit

°C

Caution Please handle this device at static-free workstation, because this is an electrostatic

sensitive device.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PG10023EJ01V0DS (1st edition)

(Previous No. P13677EJ1V0DS00)

Date Published November 2001 CP(K)

Printed in Japan

The mark

shows major revised points.



NEC Corporation 1998



NEC Compound Semiconductor Devices 2001

NE6510379A Related Products

	NE6510379A	NE6510379A-A	NE6510379A-T1-A	NE6510379A-T1
Description	RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Hetero-junction FET, 79A, 4 PIN	RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Hetero-junction FET, 79A, 4 PIN	RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Hetero-junction FET, 79A, 4 PIN	RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Hetero-junction FET, 79A, 4 PIN
Is it Rohs certified?	incompatible	conform to	conform to	incompatible
Maker	NEC Electronics	NEC Electronics	NEC Electronics	NEC Electronics
package instruction	79A, 4 PIN	79A, 4 PIN	MICROWAVE, R-CQMW-F4	79A, 4 PIN
Reach Compliance Code	compliant	compliant	compliant	compliant
Shell connection	SOURCE	SOURCE	SOURCE	SOURCE
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum drain-source breakdown voltage	6 V	6 V	6 V	6 V
Maximum drain current (ID)	4.2 A	4.2 A	4.2 A	4.2 A
FET technology	HETERO-JUNCTION	HETERO-JUNCTION	HETERO-JUNCTION	HETERO-JUNCTION
highest frequency band	L BAND	L BAND	L BAND	L BAND
JESD-30 code	R-CQMW-F4	R-CQMW-F4	R-CQMW-F4	R-CQMW-F4
Number of components	1	1	1	1
Number of terminals	4	4	4	4
Operating mode	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROWAVE	MICROWAVE	MICROWAVE	MICROWAVE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	260	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES
Terminal form	FLAT	FLAT	FLAT	FLAT
Terminal location	QUAD	QUAD	QUAD	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED	10	NOT SPECIFIED	NOT SPECIFIED
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE
JESD-609 code	e0	-	e6	e0
Terminal surface	TIN LEAD	-	TIN BISMUTH	TIN LEAD

Recommended Resources

Capacitor cleverly used as transformer circuit

Analysis of self-retained feedback of OCL power amplifier

Xidao brand LBL-238, LBL-330, (UKS26), (UKS36) refrigerator circuit

Precision timer circuit diagram

Power failure monitoring circuit (power supply inaccessible)

AC coupled audio amplifier circuit

Driver transplantation of pedometer bracelet based on F103 and X-NUCLEO-IKS01A3: This porting of the X-NUCLEO-IKS01A3 sensor driver is based on the CORE-STM32F103C8 development board. The driver porting is similar to the previous NUCLEO-STM32L011K4, mainly due to the difference in...; sylar^z ST Sensors & Low Power Wireless Technology Forum

Using LM339 to generate triangle wave: Using LM339 to generate a triangle wave. Why is there 7.5V at both ends of the comparator and the capacitor at the beginning? Is it a problem with the simulation software? ? I don't quite understand i...; 都是一个意思 Analog electronics

[2022 Digi-Key Innovation Design Competition] Project Sharing Post 2: Porting Emwin5.28 on the stm32f7 official development board: 1. IntroductionThere are many emWin GUI libraries, and emWin is very useful on STM32 and NXP. The predecessor of emWin is UCGUI, and the advanced version of UCGUI is emWin. STemWin is the emWin versio...; mameng DigiKey Technology Zone

Using BTool and CC2640R2 LaunchPad as Downloader: tip:BTool is a very feature-rich application. This guide is only used to document the OAD features of BTool. BTool SetupBTool requires a CC2640R2 development board to run the host_test application. Th...; Jacktang Wireless Connectivity

EEWORLD University-How to use TI GaN in high-efficiency power factor correction (PFC)?: How to use TI GaN in high-efficiency power factor correction (PFC)?：https://training.eeworld.com.cn/course/5767...; hi5 Power technology

[Sipeed LicheeRV 86 Panel Review] 11. Implementing TCP Client with lvgl and fork(): [i=s]This post was last edited by sonicfirr on 2022-4-12 15:35[/i]This article records the process of implementing TCP Client on the Tina system, and combines lvgl to realize opening a TCP connection ...; sonicfirr Domestic Chip Exchange

Shortcut: S0 S1 S2 S3 S4 S5 S6 S7 S8 S9 SA SB SC SD SE SF SG SH SI SJ SK SL SM SN SO SP SQ SR SS ST SU SV SW SX SY SZ T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 TA TB TC TD TE TF TG TH TI TJ TK TL TM TN TO TP TQ TR TS TT TU TV TW TX TY TZ U0 U1 U2 U3 U4 U6 U7 U8 UA UB UC UD UE UF UG UH UI UJ UK UL UM UN UP UQ UR US UT UU UV UW UX UZ V0 V1 V2 V3 V4 V5 V6 V7 V8 V9 VA VB VC VD VE VF VG VH VI VJ VK VL VM VN VO VP VQ VR VS VT VU VV VW VX VY VZ W0 W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WJ WK WL WM WN WO WP WR WS WT WU WV WW WY X0 X1 X2 X3 X4 X5 X7 X8 X9 XA XB XC XD XE XF XG XH XK XL XM XN XO XP XQ XR XS XT XU XV XW XX XY XZ Y0 Y1 Y2 Y4 Y5 Y6 Y9 YA YB YC YD YE YF YG YH YK YL YM YN YP YQ YR YS YT YX Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z8 ZA ZB ZC ZD ZE ZF ZG ZH ZJ ZL ZM ZN ZP ZR ZS ZT ZU ZV ZW ZX ZY

Popular Components