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GM71VS16403BLR-6

Description
EDO DRAM, 4MX4, 60ns, CMOS, PDSO24,
Categorystorage    storage   
File Size2MB,29 Pages
ManufacturerSK Hynix
Websitehttp://www.hynix.com/eng/
Download Datasheet Parametric Compare View All

GM71VS16403BLR-6 Overview

EDO DRAM, 4MX4, 60ns, CMOS, PDSO24,

GM71VS16403BLR-6 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSK Hynix
package instructionTSOP, TSOP24/26,.36
Reach Compliance Codecompliant
Maximum access time60 ns
I/O typeCOMMON
JESD-30 codeR-PDSO-G24
JESD-609 codee0
memory density16777216 bit
Memory IC TypeEDO DRAM
memory width4
Number of terminals24
word count4194304 words
character code4000000
Maximum operating temperature70 °C
Minimum operating temperature
organize4MX4
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP
Encapsulate equivalent codeTSOP24/26,.36
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
power supply3.3 V
Certification statusNot Qualified
refresh cycle4096
reverse pinoutYES
self refreshYES
Maximum standby current0.0001 A
Maximum slew rate0.1 mA
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL

GM71VS16403BLR-6 Related Products

GM71VS16403BLR-6 GM71VS16403BLR-7 GM71VS16403BLR-8 GM71VS16403BLT-8
Description EDO DRAM, 4MX4, 60ns, CMOS, PDSO24, EDO DRAM, 4MX4, 70ns, CMOS, PDSO24, EDO DRAM, 4MX4, 80ns, CMOS, PDSO24, EDO DRAM, 4MX4, 80ns, CMOS, PDSO24,
Is it Rohs certified? incompatible incompatible incompatible incompatible
Maker SK Hynix SK Hynix SK Hynix SK Hynix
package instruction TSOP, TSOP24/26,.36 TSOP, TSOP24/26,.36 TSOP, TSOP24/26,.36 TSOP, TSOP24/26,.36
Reach Compliance Code compliant compliant compliant compliant
Maximum access time 60 ns 70 ns 80 ns 80 ns
I/O type COMMON COMMON COMMON COMMON
JESD-30 code R-PDSO-G24 R-PDSO-G24 R-PDSO-G24 R-PDSO-G24
JESD-609 code e0 e0 e0 e0
memory density 16777216 bit 16777216 bit 16777216 bit 16777216 bit
Memory IC Type EDO DRAM EDO DRAM EDO DRAM EDO DRAM
memory width 4 4 4 4
Number of terminals 24 24 24 24
word count 4194304 words 4194304 words 4194304 words 4194304 words
character code 4000000 4000000 4000000 4000000
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C
organize 4MX4 4MX4 4MX4 4MX4
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TSOP TSOP TSOP TSOP
Encapsulate equivalent code TSOP24/26,.36 TSOP24/26,.36 TSOP24/26,.36 TSOP24/26,.36
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE
power supply 3.3 V 3.3 V 3.3 V 3.3 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
refresh cycle 4096 4096 4096 4096
self refresh YES YES YES YES
Maximum standby current 0.0001 A 0.0001 A 0.0001 A 0.0001 A
Maximum slew rate 0.1 mA 0.09 mA 0.08 mA 0.08 mA
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V
surface mount YES YES YES YES
technology CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal pitch 1.27 mm 1.27 mm 1.27 mm 1.27 mm
Terminal location DUAL DUAL DUAL DUAL
reverse pinout YES YES YES -
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