EDO DRAM, 4MX4, 60ns, CMOS, PDSO24,
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | SK Hynix |
package instruction | TSOP, TSOP24/26,.36 |
Reach Compliance Code | compliant |
Maximum access time | 60 ns |
I/O type | COMMON |
JESD-30 code | R-PDSO-G24 |
JESD-609 code | e0 |
memory density | 16777216 bit |
Memory IC Type | EDO DRAM |
memory width | 4 |
Number of terminals | 24 |
word count | 4194304 words |
character code | 4000000 |
Maximum operating temperature | 70 °C |
Minimum operating temperature | |
organize | 4MX4 |
Output characteristics | 3-STATE |
Package body material | PLASTIC/EPOXY |
encapsulated code | TSOP |
Encapsulate equivalent code | TSOP24/26,.36 |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE, THIN PROFILE |
power supply | 3.3 V |
Certification status | Not Qualified |
refresh cycle | 4096 |
reverse pinout | YES |
self refresh | YES |
Maximum standby current | 0.0001 A |
Maximum slew rate | 0.1 mA |
Nominal supply voltage (Vsup) | 3.3 V |
surface mount | YES |
technology | CMOS |
Temperature level | COMMERCIAL |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | GULL WING |
Terminal pitch | 1.27 mm |
Terminal location | DUAL |
GM71VS16403BLR-6 | GM71VS16403BLR-7 | GM71VS16403BLR-8 | GM71VS16403BLT-8 | |
---|---|---|---|---|
Description | EDO DRAM, 4MX4, 60ns, CMOS, PDSO24, | EDO DRAM, 4MX4, 70ns, CMOS, PDSO24, | EDO DRAM, 4MX4, 80ns, CMOS, PDSO24, | EDO DRAM, 4MX4, 80ns, CMOS, PDSO24, |
Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible |
Maker | SK Hynix | SK Hynix | SK Hynix | SK Hynix |
package instruction | TSOP, TSOP24/26,.36 | TSOP, TSOP24/26,.36 | TSOP, TSOP24/26,.36 | TSOP, TSOP24/26,.36 |
Reach Compliance Code | compliant | compliant | compliant | compliant |
Maximum access time | 60 ns | 70 ns | 80 ns | 80 ns |
I/O type | COMMON | COMMON | COMMON | COMMON |
JESD-30 code | R-PDSO-G24 | R-PDSO-G24 | R-PDSO-G24 | R-PDSO-G24 |
JESD-609 code | e0 | e0 | e0 | e0 |
memory density | 16777216 bit | 16777216 bit | 16777216 bit | 16777216 bit |
Memory IC Type | EDO DRAM | EDO DRAM | EDO DRAM | EDO DRAM |
memory width | 4 | 4 | 4 | 4 |
Number of terminals | 24 | 24 | 24 | 24 |
word count | 4194304 words | 4194304 words | 4194304 words | 4194304 words |
character code | 4000000 | 4000000 | 4000000 | 4000000 |
Maximum operating temperature | 70 °C | 70 °C | 70 °C | 70 °C |
organize | 4MX4 | 4MX4 | 4MX4 | 4MX4 |
Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
encapsulated code | TSOP | TSOP | TSOP | TSOP |
Encapsulate equivalent code | TSOP24/26,.36 | TSOP24/26,.36 | TSOP24/26,.36 | TSOP24/26,.36 |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE |
power supply | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
refresh cycle | 4096 | 4096 | 4096 | 4096 |
self refresh | YES | YES | YES | YES |
Maximum standby current | 0.0001 A | 0.0001 A | 0.0001 A | 0.0001 A |
Maximum slew rate | 0.1 mA | 0.09 mA | 0.08 mA | 0.08 mA |
Nominal supply voltage (Vsup) | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
surface mount | YES | YES | YES | YES |
technology | CMOS | CMOS | CMOS | CMOS |
Temperature level | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
Terminal form | GULL WING | GULL WING | GULL WING | GULL WING |
Terminal pitch | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm |
Terminal location | DUAL | DUAL | DUAL | DUAL |
reverse pinout | YES | YES | YES | - |