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SAC10

Description
Trans Voltage Suppressor Diode, 500W, 10V V(RWM), Unidirectional, 1 Element, Silicon,
CategoryDiscrete semiconductor    diode   
File Size67KB,2 Pages
ManufacturerGeneral Instrument Corp
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SAC10 Overview

Trans Voltage Suppressor Diode, 500W, 10V V(RWM), Unidirectional, 1 Element, Silicon,

SAC10 Parametric

Parameter NameAttribute value
MakerGeneral Instrument Corp
Reach Compliance Codeunknown
Other featuresLOW CAPACITANCE
Minimum breakdown voltage11.1 V
Shell connectionISOLATED
Maximum clamping voltage16.3 V
ConfigurationSINGLE
Minimum diode capacitance50 pF
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak reverse power dissipation500 W
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation1 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage10 V
Maximum reverse current5 µA
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL

SAC10 Related Products

SAC10 SAC12 SAC26 SAC7.0 SAC8.5
Description Trans Voltage Suppressor Diode, 500W, 10V V(RWM), Unidirectional, 1 Element, Silicon, Trans Voltage Suppressor Diode, 500W, 12V V(RWM), Unidirectional, 1 Element, Silicon, Trans Voltage Suppressor Diode, 500W, Unidirectional, 1 Element, Silicon, Trans Voltage Suppressor Diode, 500W, Unidirectional, 1 Element, Silicon, Trans Voltage Suppressor Diode, 500W, Unidirectional, 1 Element, Silicon,
Maker General Instrument Corp General Instrument Corp General Instrument Corp General Instrument Corp General Instrument Corp
Reach Compliance Code unknown unknown unknown unknow unknow
Other features LOW CAPACITANCE LOW CAPACITANCE LOW CAPACITANCE LOW CAPACITANCE LOW CAPACITANCE
Minimum breakdown voltage 11.1 V 13.3 V 28.9 V 8.33 V 9.44 V
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Maximum clamping voltage 16.3 V 19 V 42.3 V 12.6 V 14 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum diode capacitance 50 pF 50 pF 50 pF 50 pF 50 pF
Diode component materials SILICON SILICON SILICON SILICON SILICON
Diode type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Maximum non-repetitive peak reverse power dissipation 500 W 500 W 500 W 500 W 500 W
Number of components 1 1 1 1 1
Number of terminals 2 2 2 2 2
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C 175 °C
Minimum operating temperature -65 °C -65 °C -65 °C -65 °C -65 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
polarity UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL
Maximum power dissipation 1 W 1 W 1 W 1 W 1 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum reverse current 5 µA 5 µA 5 µA 300 µA 50 µA
surface mount NO NO NO NO NO
technology AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE
Terminal form WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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