IRFY340C-JQR-B datasheet, PDF - EEWORLD Datasheet

IRFY340C-JQR-B: DescriptionPower Field-Effect Transistor, 8.7A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, TO-220MC, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size11KB，1 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/

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IRFY340C-JQR-B Overview

Power Field-Effect Transistor, 8.7A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, TO-220MC, 3 PIN

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	TT Electronics plc
package instruction	FLANGE MOUNT, S-MSFM-P3
Reach Compliance Code	compliant
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	400 V
Maximum drain current (ID)	8.7 A
Maximum drain-source on-resistance	0.55 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-257AB
JESD-30 code	S-MSFM-P3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	METAL
Package shape	SQUARE
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON

	IRFY340C-JQR-B	IRFY340C-JQR-BR1
Description	Power Field-Effect Transistor, 8.7A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, TO-220MC, 3 PIN	Power Field-Effect Transistor, 8.7A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, TO-220MC, 3 PIN
Is it Rohs certified?	incompatible	conform to
Maker	TT Electronics plc	TT Electronics plc
package instruction	FLANGE MOUNT, S-MSFM-P3	FLANGE MOUNT, S-MSFM-P3
Reach Compliance Code	compliant	compliant
Shell connection	SOURCE	SOURCE
Configuration	SINGLE	SINGLE
Minimum drain-source breakdown voltage	400 V	400 V
Maximum drain current (ID)	8.7 A	8.7 A
Maximum drain-source on-resistance	0.55 Ω	0.55 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-257AB	TO-257AB
JESD-30 code	S-MSFM-P3	S-MSFM-P3
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	METAL	METAL
Package shape	SQUARE	SQUARE
Package form	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	PIN/PEG	PIN/PEG
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON

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