K4H560438E-NLB30 datasheet, PDF

K4H560438E-NLB30: DescriptionDDR DRAM, 64MX4, 0.7ns, CMOS, PDSO54, 0.300 X 0.551 INCH, 0.50 MM PITCH, STSOP2-54; Categorystorage storage; File Size215KB，24 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K4H560438E-NLB30 Overview

DDR DRAM, 64MX4, 0.7ns, CMOS, PDSO54, 0.300 X 0.551 INCH, 0.50 MM PITCH, STSOP2-54

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	SAMSUNG
Parts packaging code	TSOP2
package instruction	TSSOP, TSSOP54,.36,20
Contacts	54
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	0.7 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	166 MHz
I/O type	COMMON
interleaved burst length	2,4,8
JESD-30 code	R-PDSO-G54
length	14 mm
memory density	268435456 bit
Memory IC Type	DDR DRAM
memory width	4
Humidity sensitivity level	3
Number of functions	1
Number of ports	1
Number of terminals	54
word count	67108864 words
character code	64000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	64MX4
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSSOP
Encapsulate equivalent code	TSSOP54,.36,20
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Peak Reflow Temperature (Celsius)	240
power supply	2.5 V
Certification status	Not Qualified
refresh cycle	8192
Maximum seat height	1.2 mm
self refresh	YES
Continuous burst length	2,4,8
Maximum standby current	0.003 A
Maximum slew rate	0.26 mA
Maximum supply voltage (Vsup)	2.7 V
Minimum supply voltage (Vsup)	2.3 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	30
width	7.6 mm

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