IRHLYS793034CM datasheet, PDF - EEWORLD Datasheet

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IRHLYS793034CM: DescriptionPower Field-Effect Transistor, 20A I(D), 60V, 0.074ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size200KB，9 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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IRHLYS793034CM Overview

Power Field-Effect Transistor, 20A I(D), 60V, 0.074ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN

IRHLYS793034CM Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Infineon
package instruction	TO-257AA, 3 PIN
Reach Compliance Code	unknown
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	181 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (Abs) (ID)	20 A
Maximum drain current (ID)	20 A
Maximum drain-source on-resistance	0.074 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-257AA
JESD-30 code	R-CSFM-P3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	75 W
Maximum pulsed drain current (IDM)	80 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	PIN/PEG
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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PD-97292A

RADIATION HARDENED

LOGIC LEVEL POWER MOSFET

THRU-HOLE (Low-Ohmic TO-257AA)

Product Summary

Part Number

Radiation Level

IRHLYS797034CM 100K Rads (Si)

IRHLYS793034CM

300K Rads (Si)

DS(on)

0.074Ω -20A*

2N7625T3

IRHLYS797034CM

60V, P-CHANNEL

TECHNOLOGY

Low-Ohmic

TO-257AA

International Rectifier’s R7

Logic Level Power

MOSFETs provide simple solution to interfacing

CMOS and TTL control circuits to power devices in

space and other radiation environments. The

threshold voltage remains within acceptable

operating limits over the full operating temperature

and post radiation.

This is achieved while

maintaining single event gate rupture and single

event burnout immunity.

These devices are used in applications such as

current boost low signal source in PWM, voltage

comparator and operational amplifiers.

Features:

5V CMOS and TTL Compatible

Fast Switching

Single Event Effect (SEE) Hardened

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Light Weight

Complimentary N-Channel Available -

IRHLYS77034CM

Absolute Maximum Ratings

Parameter

ID@VGS = -4.5V, TC = 25°C

ID@VGS = -4.5V, TC = 100°C

IDM

PD @ TC = 25°C

VGS

EAS

IAR

EAR

dv/dt

T STG

Continuous Drain Current

Pulsed Drain Current

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

Storage Temperature Range

Lead Temperature

Weight

* Current is limited by package

For footnotes refer to the last page

-20*

-16.6

-80

0.6

±10

181

-20

7.5

10.9

-55 to 150

Pre-Irradiation

Units

W/°C

V/ns

°C

300 (0.063in/1.6mm from case for 10s)

4.3 (Typical)

www.irf.com

10/05/10

IRHLYS793034CM Related Products

	IRHLYS793034CM	2N7625T3	IRHLYS797034CM
Description	Power Field-Effect Transistor, 20A I(D), 60V, 0.074ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN	Power Field-Effect Transistor, 20A I(D), 60V, 0.074ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, CERAMIC, LOW OHMIC TO-257AA, 3 PIN	Power Field-Effect Transistor, 20A I(D), 60V, 0.074ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN
Is it Rohs certified?	incompatible	incompatible	incompatible
package instruction	TO-257AA, 3 PIN	HERMETIC SEALED, CERAMIC, LOW OHMIC TO-257AA, 3 PIN	TO-257AA, 3 PIN
Reach Compliance Code	unknown	compli	unknown
ECCN code	EAR99	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	181 mJ	181 mJ	181 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V	60 V	60 V
Maximum drain current (Abs) (ID)	20 A	20 A	20 A
Maximum drain current (ID)	20 A	20 A	20 A
Maximum drain-source on-resistance	0.074 Ω	0.074 Ω	0.074 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-257AA	TO-257AA	TO-257AA
JESD-30 code	R-CSFM-P3	R-CSFM-P3	R-XSFM-P3
JESD-609 code	e0	e0	e0
Number of components	1	1	1
Number of terminals	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	UNSPECIFIED
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	P-CHANNEL	P-CHANNEL	P-CHANNEL
Maximum power dissipation(Abs)	75 W	75 W	75 W
Maximum pulsed drain current (IDM)	80 A	80 A	80 A
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal surface	TIN LEAD	TIN LEAD	Tin/Lead (Sn/Pb)
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Maker	Infineon	-	Infineon
Base Number Matches	-	1	1

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