OTP ROM, 64KX8, 90ns, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28
Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | incompatible |
Maker | Integrated Silicon Solution ( ISSI ) |
Parts packaging code | DIP |
package instruction | 0.600 INCH, PLASTIC, DIP-28 |
Contacts | 28 |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
Maximum access time | 90 ns |
JESD-30 code | R-PDIP-T28 |
JESD-609 code | e0 |
length | 36.576 mm |
memory density | 524288 bit |
Memory IC Type | OTP ROM |
memory width | 8 |
Number of functions | 1 |
Number of terminals | 28 |
word count | 65536 words |
character code | 64000 |
Operating mode | ASYNCHRONOUS |
Maximum operating temperature | 85 °C |
Minimum operating temperature | -40 °C |
organize | 64KX8 |
Output characteristics | 3-STATE |
Package body material | PLASTIC/EPOXY |
encapsulated code | DIP |
Package shape | RECTANGULAR |
Package form | IN-LINE |
Parallel/Serial | PARALLEL |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Certification status | Not Qualified |
Maximum seat height | 4.699 mm |
Maximum supply voltage (Vsup) | 5.5 V |
Minimum supply voltage (Vsup) | 4.5 V |
Nominal supply voltage (Vsup) | 5 V |
surface mount | NO |
technology | CMOS |
Temperature level | INDUSTRIAL |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | THROUGH-HOLE |
Terminal pitch | 2.54 mm |
Terminal location | DUAL |
Maximum time at peak reflow temperature | NOT SPECIFIED |
width | 15.24 mm |
IS27C512-90WI | IS27C512-12WI | IS27C512-15WI | IS27C512-90CW | IS27C512-90CWI | IS27C512-15CW | IS27C512-15CWI | IS27C512-12CW | IS27C512-12CWI | |
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Description | OTP ROM, 64KX8, 90ns, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28 | OTP ROM, 64KX8, 120ns, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28 | OTP ROM, 64KX8, 150ns, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28 | UVPROM, 64KX8, 90ns, CMOS, CDIP28, 0.600 INCH, WINDOWED, CERAMIC, DIP-28 | UVPROM, 64KX8, 90ns, CMOS, CDIP28, 0.600 INCH, WINDOWED, CERAMIC, DIP-28 | UVPROM, 64KX8, 150ns, CMOS, CDIP28, 0.600 INCH, WINDOWED, CERAMIC, DIP-28 | UVPROM, 64KX8, 150ns, CMOS, CDIP28, 0.600 INCH, WINDOWED, CERAMIC, DIP-28 | UVPROM, 64KX8, 120ns, CMOS, CDIP28, 0.600 INCH, WINDOWED, CERAMIC, DIP-28 | UVPROM, 64KX8, 120ns, CMOS, CDIP28, 0.600 INCH, WINDOWED, CERAMIC, DIP-28 |
Is it lead-free? | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead |
Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible |
Maker | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) |
Parts packaging code | DIP | DIP | DIP | DIP | DIP | DIP | DIP | DIP | DIP |
package instruction | 0.600 INCH, PLASTIC, DIP-28 | 0.600 INCH, PLASTIC, DIP-28 | 0.600 INCH, PLASTIC, DIP-28 | 0.600 INCH, WINDOWED, CERAMIC, DIP-28 | 0.600 INCH, WINDOWED, CERAMIC, DIP-28 | 0.600 INCH, WINDOWED, CERAMIC, DIP-28 | 0.600 INCH, WINDOWED, CERAMIC, DIP-28 | 0.600 INCH, WINDOWED, CERAMIC, DIP-28 | 0.600 INCH, WINDOWED, CERAMIC, DIP-28 |
Contacts | 28 | 28 | 28 | 28 | 28 | 28 | 28 | 28 | 28 |
Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant | compliant | compliant | compliant |
ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
Maximum access time | 90 ns | 120 ns | 150 ns | 90 ns | 90 ns | 150 ns | 150 ns | 120 ns | 120 ns |
JESD-30 code | R-PDIP-T28 | R-PDIP-T28 | R-PDIP-T28 | R-GDIP-T28 | R-GDIP-T28 | R-GDIP-T28 | R-GDIP-T28 | R-GDIP-T28 | R-GDIP-T28 |
JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
memory density | 524288 bit | 524288 bit | 524288 bit | 524288 bit | 524288 bit | 524288 bit | 524288 bit | 524288 bit | 524288 bit |
Memory IC Type | OTP ROM | OTP ROM | OTP ROM | UVPROM | UVPROM | UVPROM | UVPROM | UVPROM | UVPROM |
memory width | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
Number of functions | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 28 | 28 | 28 | 28 | 28 | 28 | 28 | 28 | 28 |
word count | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words |
character code | 64000 | 64000 | 64000 | 64000 | 64000 | 64000 | 64000 | 64000 | 64000 |
Operating mode | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
Maximum operating temperature | 85 °C | 85 °C | 85 °C | 70 °C | 85 °C | 70 °C | 85 °C | 70 °C | 85 °C |
Minimum operating temperature | -40 °C | -40 °C | -40 °C | - | -40 °C | - | -40 °C | - | -40 °C |
organize | 64KX8 | 64KX8 | 64KX8 | 64KX8 | 64KX8 | 64KX8 | 64KX8 | 64KX8 | 64KX8 |
Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED |
encapsulated code | DIP | DIP | DIP | WDIP | WDIP | WDIP | WDIP | WDIP | WDIP |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | IN-LINE | IN-LINE | IN-LINE | IN-LINE, WINDOW | IN-LINE, WINDOW | IN-LINE, WINDOW | IN-LINE, WINDOW | IN-LINE, WINDOW | IN-LINE, WINDOW |
Parallel/Serial | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
Maximum supply voltage (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
Minimum supply voltage (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
surface mount | NO | NO | NO | NO | NO | NO | NO | NO | NO |
technology | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
Temperature level | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | COMMERCIAL | INDUSTRIAL | COMMERCIAL | INDUSTRIAL | COMMERCIAL | INDUSTRIAL |
Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
Terminal location | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |