CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
Dual Silicon Transistor
VOLTAGE 50 Volts
APPLICATION
* Small Signal Amplifier .
CHEMY1PT
CURRENT 150 mAmpere
FEATURE
* Small surface mounting type. (SOT-553)
* P
C
= 150mW (Total).
* High saturation current capability.
* Includes a 2SC2412K and a 2SA1037K in one package.
(4)
(3)
SOT553
MARKING
* Y1
0.9~1.1
(5)
(1)
0.50
0.50
1.5~1.7
0.15~0.3
1.1~1.3
0.5~0.6
0.19~0.18
1.5~1.7
CIRCUIT
3
2
1
4
5
Dimensions in millimeters
SOT553
NPN Transistor 2SC2412K LIMITING VALUES
MAXIMUM RATINGES
( At T
A
= 25
o
C unless otherwise noted )
RATINGS
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current DC
Peak Collector Current
Peak Base Current
Total Power Dissipation
Storage Temperature
Junction Temperature
Operating Ambient Temperature
T
A
≤
25
O
C; Note 1
CONDITION
Open Emitter
Open Base
Open Collector
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
TOT
T
STG
T
J
T
AMB
MIN.
-
-
-
-
-
-
-
-55
-
-55
MAX.
60
50
7
150
150
15
150
+150
+150
+150
UNITS
Volts
Volts
Volts
mAmps
mAmps
mAmps
mW
o
C
C
C
o
o
Note
1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t.
2004-11
PNP Transistor 2SA1037K
LIMITING VALUES
MAXIMUM RATINGES
( At T
A
= 25 C unless otherwise noted )
RATINGS
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current DC
Peak Collector Current
Peak Base Current
Total Power Dissipation
Storage Temperature
Junction Temperature
Operating Ambient Temperature
T
A
≤
25
O
C; Note 2
CONDITION
Open Emitter
Open Base
Open Collector
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
TOT
T
STG
T
J
T
AMB
MIN.
-
-
-
-
-
-
-
-55
-
-55
MAX.
-60
-50
-6
-150
-150
-15
150
+150
+150
+150
UNITS
Volts
Volts
Volts
mAmps
mAmps
mAmps
mW
o
C
C
C
o
o
Note
2. Transistor mounted on ceramic substrate 50mmX50mmx0.8t.
2SC2412K CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
( At T
A
= 25
o
C unless otherwise noted )
PARAMETERS
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation
Voltage
Output Collector Capacitance
Transition Frequency
CONDITION
I
C
=50uA
I
C
=1mA
I
E
=50uA
I
E
=0; V
CB
=60V
I
C
=0; V
EB
=7V
V
CE
=6V
I
C
=1mA
I
C
=50mA; I
B
=5mA
I
E
=ie=0; V
CB
=12V;
f=1MHz
I
C
=2mA; V
CE
=12V;
f=100MHz
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CEO
h
FE
V
CEsat
C
ob
f
T
MIN.
60
50
7
-
-
120
-
-
-
TYPE
-
-
-
-
-
-
-
2
180
MAX.
-
-
-
0.1
0.1
560
0.4
3.5
-
Volts
pF
MHz
uA
UNITS
Volts
Volts
Volts
2SA1037K
CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
( At T
A
= 25 C unless otherwise noted )
PARAMETERS
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation
Voltage
Output Collector Capacitance
Transition Frequency
CONDITION
I
C
=-50uA
I
C
=-1mA
I
E
=-50uA
I
E
=0; V
CB
=-60V
I
C
=0; V
EB
=-6V
V
CE
=-6V
I
C
=-1mA
I
C
=-50mA; I
B
=-5mA
I
E
=ie=0; V
CB
=-12V;
f=1MHz
I
E
=2mA; V
CE
=-12V;
f=100MHz
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CEsat
C
ob
f
T
MIN.
-60
-50
-6
-
-
120
-
-
-
-
-
-
-
-
-
4
140
TYPE
-
MAX.
-
-
-
-0.1
-0.1
560
-0.5
5.0
-
Volts
pF
MHz
uA
UNITS
Volts
Volts
Volts
o
RATING CHARACTERISTIC CURVES ( CHEMY1PT )
2SC2412K Typical Electrical Characteristics
Fig.1
50
Grounded emitter propagation
characteristics
V
CE
=6V
COLLECTOR CURRENT : I
C
(mA)
Fig.2
100
Grounded emitter output
characteristics
0.50mA
mA
0.45
A
0m
0.4
0.35mA
500
Fig.3 DC current gain vs.
collector current (1)
Ta=25
O
C
Ta=25
O
C
COLLECTOR CURRENT : I
C
(mA)
20
10
5
Ta=100
O
C
25
Ο
C
55
O
C
DC CURRENT GAIN : h
FE
80
0.30mA
60
0.25mA
0.20mA
40
0.15mA
0.10mA
20
0.05mA
I
B
=0A
0
0.4
0.8
1.2
1.6
2.0
200
V
CE
=5V
3V
1V
100
2
1
0.5
0.2
0.1
0
50
20
10
0.2
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : V
BE
(V)
0.5 1
2
5
10 20
50 100 200
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR CURRENT : I
C
(mA)
Fig.4 DC current gain vs.
collector current (2)
500
Ta=100
O
C
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
Fig.
5
Collector-emitter saturation
voltage vs. collector current
0.5
Fig.6 Collector-emitter saturation
voltage vs. collector current
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
V
CE
=5V
Ta=25
0.5
I
C
/I
B
=10
DC CURRENT GAIN : h
FE
200
25
O
C
-55
O
C
0.2
I
C
/I
B
=50
20
10
0.2
Ta=100
O
C
25
O
C
-55
O
C
100
0.1
0.05
0.1
0.05
50
0.02
0.02
20
10
0.2
0.5 1
2
5
10 20
50 100 200
0.01
0.2
0.01
0.2
0.5 1
2
5
10
20
50 100 200
0.5 1
2
5
10
20
50 100
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
Fig.7 Gain bandwidth product vs.
emitter current
BASE COLLECTOR TIME CONSTANT : Cc·r
bb'
(ps)
TRANSITION FREQUENCY : f
T
(MHz)
Fig.8 Base-collector time constant
vs. emitter current
Ta=25
O
C
f=32MH
Z
V
CB
=6V
500
Ta=25
O
V
CE
=6V
200
100
200
50
100
20
50
0.5
10
0.2
0.5
1
2
5
10
1
2
5
10
20
50
100
EMITTER CURRENT : I
E
(mA)
EMITTER CURRENT : I
E
(mA)
RATING CHARACTERISTIC CURVES ( CHEMY1PT )
2SA1037K Typical Electrical Characteristics
Fig.1
−50
COLLECTOR CURRENT : I
C
(mA)
Grounded emitter propagation
characteristics
Ta=100˚C
25˚C
−40˚C
V
CE
=−6V
Fig.2
−10
COLLECTOR CURRENT : I
C
(mA)
Grounded emitter output
characteristics
Fig.3 DC current gain vs.
collector current (1)
500
Ta=25˚C
V
CE
=−5V
−3V
−1V
−35.0
Ta=25˚C
−20
−10
−5
−2
−1
−0.5
−0.2
−0.1
−31.5
DC CURRENT GAIN : h
FE
−8
−28.0
−24.5
−6
−21.0
−17.5
200
−4
−14.0
−10.5
100
−2
−7.0
−3.5µA
50
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
-1.8
BASE TO EMITTER VOLTAGE : V
BE
(V)
0
−0.4
−0.8
−1.2
−1.6
I
B
=0
−2.0
−0.2 −0.5 −1
−2
−5 −10 −20
−50 −100
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR CURRENT : I
C
(mA)
Fig.4 DC current gain vs.
collector current (2)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
Fig.
5
Collector-emitter saturation
voltage vs. collector current
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
Fig.6 Collector-emitter saturation
voltage vs. collector current
−1
l
C
/l
B
=10
500
Ta=100˚C
25˚C
DC CURRENT GAIN : h
FE
−1
V
CE
=−6V
Ta=25˚C
−0.5
−0.5
200
−40˚C
100
−0.2
I
C
/I
B
=50
−0.2
Ta=100˚C
25˚C
−40˚C
−0.1
20
10
−0.1
50
−0.05
−0.2 −0.5 −1
−2
−5 −10 −20
−0.05
−0.2 −0.5 −1
−2
−5 −10 −20
−50 −100
−0.2 −0.5 −1
−2
−5 −10 −20
−50 −100
−50 −100
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
Fig.7 Gain bandwidth product vs.
emitter current
1000
TRANSITION FREQUENCY : f
T
(MHz)
Ta=25˚C
V
CE
=−12V
500
200
100
50
0.5
1
2
5
10
20
50
100
EMITTER CURRENT : I
E
(mA)
京公网安备 11010802033920号
EEWORLD
