RN2409(TE85L) datasheet, PDF - EEWORLD Datasheet

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RN2409(TE85L): DescriptionTRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, 3 PIN, BIP General Purpose Small Signal; CategoryDiscrete semiconductor The transistor; File Size341KB，6 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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RN2409(TE85L) Overview

TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, 3 PIN, BIP General Purpose Small Signal

RN2409(TE85L) Parametric

Parameter Name	Attribute value
Maker	Toshiba Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	BUILT-IN BIAS RESISTOR RATIO IS 2.14
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	70
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz

RN2409(TE85L) Related Products

	RN2409(TE85L)	RN2409(TE85R)	RN2409(TE85R2)	RN2409(TE85L2)
Description	TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, 3 PIN, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, 3 PIN, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, 3 PIN, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, 3 PIN, BIP General Purpose Small Signal
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	3	3	3	3
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
Other features	BUILT-IN BIAS RESISTOR RATIO IS 2.14	BUILT-IN BIAS RESISTOR RATIO IS 2.14	BUILT-IN BIAS RESISTOR RATIO IS 2.14	BUILT-IN BIAS RESISTOR RATIO IS 2.14
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	50 V	50 V	50 V	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	70	70	70	70
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	PNP	PNP	PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	200 MHz	200 MHz	200 MHz	200 MHz

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