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NE71300-M

Description
KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET, DIE-6
CategoryDiscrete semiconductor    The transistor   
File Size238KB,18 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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NE71300-M Overview

KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET, DIE-6

NE71300-M Parametric

Parameter NameAttribute value
MakerRenesas Electronics Corporation
Parts packaging codeDIE
Contacts6
Reach Compliance Codeunknown
ConfigurationSingle
Minimum drain-source breakdown voltage5 V
Maximum drain current (Abs) (ID)0.08 A
Maximum drain current (ID)0.03 A
FET technologyMETAL SEMICONDUCTOR
highest frequency bandKU BAND
JESD-30 codeR-XUUC-N3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formMICROWAVE
Polarity/channel typeN-CHANNEL
Maximum power consumption environment0.4 W
Minimum power gain (Gp)8 dB
surface mountYES
Terminal formNO LEAD
Terminal locationUPPER
transistor applicationsAMPLIFIER
Transistor component materialsGALLIUM ARSENIDE
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas
Electronics Corporation
took over all the business of both
companies.
Therefore, although the old company name remains in this document, it is a valid
Renesas
Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1
st
, 2010
Renesas Electronics Corporation
Issued by:
Renesas Electronics Corporation
(http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.

NE71300-M Related Products

NE71300-M NE71300-N NE71300-L
Description KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET, DIE-6 KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET, DIE-6 KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET, DIE-6
Maker Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation
Parts packaging code DIE DIE DIE
Contacts 6 6 6
Reach Compliance Code unknown unknown unknown
Configuration Single Single Single
Minimum drain-source breakdown voltage 5 V 5 V 5 V
Maximum drain current (Abs) (ID) 0.08 A 0.05 A 0.12 A
Maximum drain current (ID) 0.03 A 0.03 A 0.03 A
FET technology METAL SEMICONDUCTOR METAL SEMICONDUCTOR METAL SEMICONDUCTOR
highest frequency band KU BAND KU BAND KU BAND
JESD-30 code R-XUUC-N3 R-XUUC-N3 R-XUUC-N3
Number of components 1 1 1
Number of terminals 3 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C 175 °C
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form MICROWAVE MICROWAVE MICROWAVE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power consumption environment 0.4 W 0.4 W 0.4 W
Minimum power gain (Gp) 8 dB 8 dB 8 dB
surface mount YES YES YES
Terminal form NO LEAD NO LEAD NO LEAD
Terminal location UPPER UPPER UPPER
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials GALLIUM ARSENIDE GALLIUM ARSENIDE GALLIUM ARSENIDE

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