70A, 60V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | Texas Instruments |
| package instruction | FLANGE MOUNT, R-PSFM-T3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| NDP706B | NDB706A | NDP706A | |
|---|---|---|---|
| Description | 70A, 60V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 75A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | 75A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| Maker | Texas Instruments | Texas Instruments | Texas Instruments |
| package instruction | FLANGE MOUNT, R-PSFM-T3 | SMALL OUTLINE, R-PSSO-G2 | FLANGE MOUNT, R-PSFM-T3 |
| Reach Compliance Code | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 |
| Is it lead-free? | Contains lead | - | Contains lead |
| Is it Rohs certified? | incompatible | - | incompatible |
| Configuration | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | - | 60 V | 60 V |
| Maximum drain current (ID) | - | 75 A | 75 A |
| Maximum drain-source on-resistance | - | 0.015 Ω | 0.015 Ω |
| FET technology | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| Maximum feedback capacitance (Crss) | - | 800 pF | 800 pF |
| JEDEC-95 code | - | TO-263AB | TO-220AB |
| JESD-30 code | - | R-PSSO-G2 | R-PSFM-T3 |
| Number of components | - | 1 | 1 |
| Number of terminals | - | 2 | 3 |
| Operating mode | - | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | - | 175 °C | 175 °C |
| Package body material | - | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | - | RECTANGULAR | RECTANGULAR |
| Package form | - | SMALL OUTLINE | FLANGE MOUNT |
| Polarity/channel type | - | N-CHANNEL | N-CHANNEL |
| Maximum power consumption environment | - | 150 W | 150 W |
| Maximum pulsed drain current (IDM) | - | 225 A | 225 A |
| Certification status | - | Not Qualified | Not Qualified |
| surface mount | - | YES | NO |
| Terminal form | - | GULL WING | THROUGH-HOLE |
| Terminal location | - | SINGLE | SINGLE |
| transistor applications | - | SWITCHING | SWITCHING |
| Transistor component materials | - | SILICON | SILICON |
| Maximum off time (toff) | - | 280 ns | 280 ns |
| Maximum opening time (tons) | - | 430 ns | 430 ns |
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