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FR3M

Description
3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214AB
Categorysemiconductor    Discrete semiconductor   
File Size282KB,2 Pages
ManufacturerSY
Websitehttp://www.shunyegroup.com/
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FR3M Overview

3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214AB

Reverse Voltage - 50 to 1000 Volts
DO-214AB
SURFACE MOUNT FAST RECOVERY RECTIFIER
FEATURES
FR3A THRU FR3M
Forward Current - 3.0 Amperes
0.126 (3.20)
0.114 (2.90)
0.245(6.22)
0.220(5.59)
0.280(7.11)
0.260(6.60)
0.012(0.305)
0.006(0.152)
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Low reverse leakage
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds at terminals
Glass passivated chip junction
0.103(2.62)
0.079(2.06)
MECHANICAL DATA
Case:
JEDEC DO-214AB molded plastic body over passivated chip
Terminals:
Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:0.007
ounce, 0.25grams
0.060(1.52)
0.030(0.76)
0.008(0.203)MAX.
0.320(8.13)
0.305(7.75)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SYMBOLS
FR3A FR3B FR3D
FR3G FR3J
FR3K FR3M
UNITS
VOLTS
VOLTS
VOLTS
Amps
Amps
Volts
µ
A
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
L
=75 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 3.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Maximum reverse recovery time
(NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
,
T
STG
50
35
50
100
70
100
200
140
200
400
280
400
3.0
100.0
1.3
5.0
100.0
600
420
600
800
560
800
1000
700
1000
150
250
60.0
50.0
-65 to +150
500
ns
pF
C/W
C
Note:1.Reverse
recovery condition I
F
=0.5A,I
R
=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
www.diode.kr
www.shunyegroup.com

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FR3M FR3A FR3B FR3G FR3K FR3J FR3D
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