LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
•
•
Applications
Inverter, Interface, Driver
3
LDTA115ELT1G
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
We declare that the material of product compliance with
RoHS requirements.
1
BASE
1
2
SOT–23
•
R1
R2
3
COLLECTOR
Absolute maximum ratings
(Ta=25°C)
Parameter
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
Symbol
V
CC
V
I
I
O
I
C(Max.)
P
D
Tj
Tstg
Limits
−50
−40
to
+10
−20
−100
150
150
−55
to
+150
Unit
V
V
mA
mW
°C
°C
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
LDTA115ELT1G
LDTA115ELT3G
Marking
A6N
A6N
R1 (K)
100
100
R2 (K)
100
100
Shipping
3000/Tape & Reel
10000/Tape & Reel
Electrical characteristics
(Ta=25°C)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
∗
Characteristics of built-in transistor
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
R
1
R
2
/R
1
f
T
∗
Min.
−
−3
−
−
−
82
70
0.8
−
Typ.
−
−
−0.1
−
−
−
100
1
250
Max.
−0.5
−
−0.3
−0.15
−0.5
−
130
1.2
−
Unit
V
V
mA
µA
−
kΩ
−
MHz
Conditions
V
CC
= −5V,
I
O
= −100µA
V
O
= −0.3V,
I
O
= −1mA
I
O
= −5mA,
I
I
= −0.25mA
V
I
= −5V
V
CC
= −50V,
V
I
=0V
I
O
= −5mA,
V
O
= −5V
−
−
V
CE
= −10V,
I
E
=5mA,
f=100MHz
1/3
LESHAN RADIO COMPANY, LTD.
LDTA115ELT1G
Electrical characteristic curves
100
50
V
O
=0.3V
OUTPUT CURRENT : I
O
(A)
10m
5m
2m
1m
500µ
V
CC
=5V
INPUT VOLTAGE : V
I
(
on
)
(V)
20
10
5
Ta=
−40°C
Ta=25°C
Ta=100°C
Ta=25°C
200µ
100µ
50µ
20µ
10µ
5µ
2µ
1µ
0
Ta=
−40°C
2
1
500m
Ta=100°C
200m
100m
100µ 200µ
500µ 1m
2m
5m 10m 20m
50m 100m
500m
1
1.5
2
2.5
3
OUTPUT CURRENT : I
O
(A)
INPUT VOLTAGE : V
I
(off) (V)
Fig.1 Input voltage vs. Output current
(ON characteristics)
1k
500
Fig.2 Output current vs. Input voltage
(OFF characteristics)
1
V
O
=5V
Ta=100°C
I
O
/I
I
=20/1
500m
OUTPUT VOLTAGE : V
O
(
on
)
(V)
DC CURRENT GAIN : G
I
200
100
50
20
10
5
2
1
10µ
20µ
50µ 100µ 200µ
Ta=25°C
200m
100m
50m
20m
10m
5m
2m
Ta=25°C
Ta=100°C
Ta=
−40°C
Ta=
−40°C
500µ 1m
2m
5m 10m
1m
10µ
20µ
50µ 100µ 200µ
500µ 1m
2m
5m 10m
OUTPUT CURRENT : I
O
(A)
OUTPUT CURRENT : I
O
(A)
Fig.3 DC current gain vs. Output current
Fig.4 Output voltage vs. Output current
2/3
LESHAN RADIO COMPANY, LTD.
LDTA115ELT1G
SOT-23
NOTES:
A
L
3
1
V
G
2
B S
DIM
A
B
C
D
G
H
J
J
K
L
S
V
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0040
0.0034
0.0140
0.0350
0.0830
0.0177
0.0070
0.0285
0.0401
0.1039
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.35
0.89
2.10
0.45
0.177
0.69
1.02
2.64
0.60
C
D
H
K
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
3/3
Automotive Electronics
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