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DTD713ZE

Description
200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors)
File Size173KB,3 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
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DTD713ZE Overview

200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors)

200mA / 30V Low V
CE
(sat) Digital transistors
(with built-in resistors)
DTD713ZE / DTD713ZM
Applications
Inverter, Interface, Driver
Feature
1) V
CE
(sat) is lower than conventional products.
2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see equivalent circuit).
3) The bias resistors consist of thin-film resistors with
complete isolation to allow negative biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
4) Only the on / off conditions need to be set for operation,
making the device design easy.
Dimensions
(Unit : mm)
DTD713ZE
1.6
0.3
(3)
0.7
0.55
0.8
(2)
(1)
1.6
0.2
0.5 0.5
1.0
EMT3
JEITA No. (SC-75A)
JEDEC No. <SOT-416>
0.2
0.15
0.1Min.
0.13
(1) GND
(2) IN
(3) OUT
Each lead has same dimensions
Abbreviated symbol : P21
DTD713ZM
0.2
0.8
1.2
0.22
(1)(2)
1.2
0.32
(3)
Structure
NPN epitaxial plannar silicon transistor
(Resistor built-in type)
VMT3
0.4 0.4
0.8
0.5
(1) IN
(2) GND
(3) OUT
0.2
Each lead has same dimensions
Packaging specifications
Package
Packaging type
Code
Part No.
DTD713ZE
DTD713ZM
Basic ordering
unit (pieces)
EMT3
Taping
TL
3000
VMT3
Taping
T2L
8000
Abbreviated symbol : P21
Absolute maximum ratings
(Ta=25°C
Parameter
Supply voltage
Input voltage
Collector current
Power dissipation
Junction temperature
Storage temperature
∗1
∗2
Inner circuit
Limits
Unit
R
1
OUT
Symbol
V
CC
V
IN
I
C (max)
P
D
Tj
Tstg
DTD713ZE DTD713ZM
30
−5
to
+10
200
150
150
−55
to
+150
V
V
IN
R
2
GND
mA
mW
C
C
IN
GND
OUT
∗1
Characteristics of built-in transistor.
∗2
Each terminal mounted on a recommended land.
R
1
=1.0kΩ / R
2
=10kΩ
www.rohm.com
c
2009 ROHM Co., Ltd. All rights reserved.
1/2
2009.05 - Rev.B

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Description 200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors) 200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors) 200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors)

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