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SED8820

Description
Field effect tube low capacitance MOS tube dual N-channel
CategoryDiscrete semiconductor   
File Size377KB,5 Pages
ManufacturerSINO-IC Microelectronic Co., Ltd.
Websitehttp://www.sino-ic.net
Shanghai Guangyu Ruixin Microelectronics Co., Ltd. specializes in the design, development and sales of semiconductor overvoltage protection devices and integrated circuits. It is one of the domestic suppliers that masters the core technology of semiconductor overvoltage protection devices and integrated circuits. They are used in communication systems, portable products, lithium battery protection, power system overvoltage protection, LED drive, etc.
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SED8820 Overview

Field effect tube low capacitance MOS tube dual N-channel

Features

Product name: Field effect tube low capacitance MOS tube dual N channel


Product model: SED8820


product features:


For a single mosfet


VDSS = 20 V


RDS(ON) < 19mΩ? @ VGS=4.5V @Ids=7A


RDS(ON) < 23mΩ? @ VGS=2.5V @Ids=4A




Applications:


Battery protection


Load switch


Power management



Construction :


Silicon epitaxial planer




Package: DFNWB2×5-6L


SED8820 Preview

Download Datasheet
SHANGHAI
MICROELECTRONICS CO., LTD.
Feb 2010
SED8820
Dual N-Channel Enhancement Mode Field Effect Transistor
Revision:A
Features
For a single mosfet
●V
DSS
= 20 V
●R
DS(ON)
< 19mΩ @ V
GS
=4.5V @Ids=7A
R
DS(ON)
< 23mΩ @ V
GS
=2.5V @Ids=4A
Applications
●Battery
protection
●Load
switch
●Power
management
Construction
●Silicon
epitaxial planer
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Continuous
Pulsed
Drain-Source Diode Forward Current
Maximum Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
T
STG
20
±12
7
28
1.7
1.5
-55 to 150
V
V
A
A
W
°C
ShangHai Sino-IC Microelectronics Co., Ltd.
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