P6SMB12CAT3 datasheet, PDF - EEWORLD Datasheet

P6SMB12CAT3: Description600W, BIDIRECTIONAL, SILICON, TVS DIODE; CategoryDiscrete semiconductor diode; File Size49KB，5 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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600W, BIDIRECTIONAL, SILICON, TVS DIODE

Parameter Name	Attribute value
Maker	Motorola ( NXP )
package instruction	R-PDSO-C2
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum breakdown voltage	12.6 V
Minimum breakdown voltage	11.4 V
Breakdown voltage nominal value	12 V
Maximum clamping voltage	16.7 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	R-PDSO-C2
JESD-609 code	e0
Maximum non-repetitive peak reverse power dissipation	600 W
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
polarity	BIDIRECTIONAL
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	10.2 V
Maximum reverse current	5 µA
surface mount	YES
technology	AVALANCHE
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	C BEND
Terminal location	DUAL

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