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P6KE47E3

Description
600 W, UNIDIRECTIONAL, SILICON, TVS DIODE
CategoryDiscrete semiconductor    diode   
File Size240KB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance
Download Datasheet Parametric View All

P6KE47E3 Overview

600 W, UNIDIRECTIONAL, SILICON, TVS DIODE

P6KE47E3 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMicrosemi
package instructionO-PALF-W2
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
Maximum breakdown voltage51.7 V
Minimum breakdown voltage42.3 V
Breakdown voltage nominal value47 V
Shell connectionISOLATED
Maximum clamping voltage67.8 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-PALF-W2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation600 W
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation5 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage38.1 V
Maximum reverse current5 µA
surface mountNO
technologyAVALANCHE
Terminal surfaceMATTE TIN
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
P6KE6.8 thru 200CA, e3
600 Watt TRANSIENT VOLTAGE
SUPPRESSOR
SCOTTSDALE DIVISION
DESCRIPTION
This P6KE series is an economical 600 W Transient Voltage Suppressor (TVS)
for protecting voltage-sensitive components from destruction or degradation. It
is available in both unidirectional and bi-directional configurations as well as
RoHS Compliant (annealed matte-Tin finish) with an e3 suffix added to the part
number. The response time of their clamping action is virtually instantaneous.
As a result, they may also be used effectively for protection from ESD or EFT
per IEC61000-4-2 and IEC61000-4-4 or for inductive switching environments
and induced RF. They can also be used for protecting other sensitive
components from secondary lightning effects per IEC61000-4-5 and class
levels defined herein. Microsemi also offers numerous other TVS products to
meet higher and lower power demands and special applications.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
T-18
FEATURES
Available in both unidirectional and bidirectional
(add C or CA suffix to part number for bidirectional)
Optional 100%
screening for avionics grade
is
available by adding MA prefix to part number for added
100% temperature cycle -55
o
C to +125
o
C (10X) as well
as surge (3X) and 24 hours HTRB with post test V
Z
&
I
R
(in the operating direction for unidirectional or both
directions for bidirectional)
Options for screening in accordance with MIL-PRF-
19500 for JAN, JANTX, and JANTXV are available by
adding MQ, MX, or MV prefixes respectively to part
numbers.
Surface mount equivalents available as SMBJP6KE6.8
to SMBJP6KE200CA or SMBJ5.0 to SMBJ170CA
(consult factory for other surface mount options)
Moisture classification is Level 1 with no dry pack
required per IPC/JEDEC J-STD-020B
RoHS Compliant devices available by adding “e3” suffix
APPLICATIONS / BENEFITS
Selections for 6.8 to 200 volts breakdown (V
BR
)
Economical TVS series for thru-hole mounting
Protects sensitive components such as IC’s,
2
CMOS, Bipolar, BiCMOS, ECL, DTL, T L, etc.
Protection from switching transients & induced RF
Compliant to IEC61000-4-2 and IEC61000-4-4 for
ESD and EFT protection respectively
Secondary lightning protection per IEC61000-4-5
with 42 Ohms source impedance:
Class 1: P6KE6.8 to P6KE130A or CA
Class 2: P6KE6.8 to P6KE68A or CA
Class 3: P6KE6.8 to P6KE36A or CA
Class 4: P6KE6.8 to P6KE18A or CA
Secondary lightning protection per IEC61000-4-5
with 12 Ohms source impedance:
Class 1: P6KE6.8 to P6KE43A or CA
Class 2: P6KE6.8 to P6KE22A or CA
MAXIMUM RATINGS
Peak Pulse Power dissipation at 25
o
C: 600 watts at
10/1000
μs
(also see Fig 1,2, and 3).
Impulse repetition rate (duty factor): 0.01%
t
clamping
(0 volts to
V
(BR)
min.): < 100 ps theoretical for
unidirectional and < 5 ns for bidirectional
Operating and Storage temperature: -65
o
C to +150
o
C
Thermal Resistance: 25
o
C/W at 3/8 inch (10 mm) lead
length from body, or 85°C/W junction to ambient when
mounted on FR4 PC board with 4 mm
2
copper pads (1
oz) and track width 1 mm, length 25 mm
o
Steady-State Power: 5 watts @ T
L
=25 C 3/8 inch (10
mm) from body, or 1.47 W when mounted on FR4 PC
board described for thermal resistance
Forward Voltage at 25
o
C: 3.5 Volts maximum @ 100
Amp peak impulse of 8.3 ms half-sine wave
(unidirectional only)
Solder temperatures: 260
o
C for 10 s (maximum)
Copyright
©
2007
6-20-2007 REV G
MECHANICAL AND PACKAGING
CASE: Void-free transfer molded thermosetting
epoxy body meeting UL94V-0
FINISH: Tin-Lead or RoHS Compliant annealed
matte-Tin plating readily solderable per MIL-STD-
750, method 2026
MARKING: Body marked with part number
POLARITY: Band denotes cathode. Bidirectional
not marked
WEIGHT: 0.7 grams (approximate)
TAPE & REEL option: Standard per EIA-296 (add
“TR” suffix to part number)
See package dimensions on last page
P6KE6.8 thru 200A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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