EEWORLDEEWORLDEEWORLD

Part Number

Search

HY5PS1G431AFP-E3

Description
1Gb DDR2 SDRAM
Categorystorage    storage   
File Size564KB,36 Pages
ManufacturerSK Hynix
Websitehttp://www.hynix.com/eng/
Environmental Compliance
Download Datasheet Parametric Compare View All

HY5PS1G431AFP-E3 Overview

1Gb DDR2 SDRAM

HY5PS1G431AFP-E3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSK Hynix
Parts packaging codeBGA
package instructionTFBGA, BGA68,9X19,32
Contacts68
Reach Compliance Codeunknow
ECCN codeEAR99
access modeMULTI BANK PAGE BURST
Maximum access time0.6 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)200 MHz
I/O typeCOMMON
interleaved burst length4,8
JESD-30 codeR-PBGA-B68
JESD-609 codee1
length17.5 mm
memory density1073741824 bi
Memory IC TypeDDR DRAM
memory width4
Number of functions1
Number of ports1
Number of terminals68
word count268435456 words
character code256000000
Operating modeSYNCHRONOUS
organize256MX4
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA68,9X19,32
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)260
power supply1.8 V
Certification statusNot Qualified
refresh cycle8192
Maximum seat height1.2 mm
self refreshYES
Continuous burst length4,8
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature20
width11 mm
HY5PS1G431A(L)FP
HY5PS1G831A(L)FP
HY5PS1G1631A(L)FP
1Gb DDR2 SDRAM
HY5PS1G431A(L)FP
HY5PS1G831A(L)FP
HY5PS1G1631A(L)FP
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev. 0.7 / Oct. 2007
1

HY5PS1G431AFP-E3 Related Products

HY5PS1G431AFP-E3 HY5PS1G1631AFP HY5PS1G1631ALFP HY5PS1G431ALFP HY5PS1G831AFP HY5PS1G831ALFP HY5PS1G1631AFP-Y5 HY5PS1G431AFP HY5PS1G831ALFP-C4
Description 1Gb DDR2 SDRAM 1Gb DDR2 SDRAM 1Gb DDR2 SDRAM 1Gb DDR2 SDRAM 1Gb DDR2 SDRAM 1Gb DDR2 SDRAM 1Gb DDR2 SDRAM 1Gb DDR2 SDRAM 1Gb DDR2 SDRAM
Application of high-torque micro-displacement platform based on piezoelectric stack in performance testing of power amplifier
Experiment name: Research on high-torque micro-displacement platform based on piezoelectric stack Research direction: Performance testing of micro-displacement platforms Experimental content: In order...
aigtek01 LED Zone
Request a free ZVS buck-boost evaluation board!
[font=微软雅黑][size=3]PI37xx is a series of high efficiency, wide input range DC-DC ZVS buck-boost regulators that integrate a ZVS controller, power switch and supporting components in a system-in-packag...
eric_wang Power technology
bq30z50/55 senc file export configuration process
1. Check that the Data Flash content is configured correctly and ensure that it is written.Operation:a. When modifying the Data Flash content, you can directly click the parameter to be modified. When...
qwqwqw2088 Analogue and Mixed Signal
Three-cell lithium battery charging management IC-VAS5176 charging current test
[i=s]This post was last edited by yaohongxia0903 on 2019-8-1 22:14[/i]VAS5176 is a 8.5V-24V input, highly integrated switch-type lithium-ion/polymer battery charging chip that regulates 2A charging cu...
yaohongxia0903 Power technology
USB TYPE C interface problem urgent help
I have used USB3300 to drive USB in other products before, and there was no problem. Recently, a project changed the USB interface to TYPE C, rewired, and soldered 3 boards. All of them had the same p...
olive888 Analog electronics
Notice on the extension of ON Semiconductor and Avnet IoT Innovation Design Competition
Notice on the extension of ON Semiconductor and Avnet IoT Innovation Design CompetitionDear contestants:We regret to inform you that the 2020-2021 ON Semiconductor and Avnet IoT Innovation Design Comp...
EEWORLD社区 onsemi and Avnet IoT Innovation Design Competition

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号