NE1280100 datasheet, PDF - EEWORLD Datasheet

NE1280100: DescriptionRF Power Field-Effect Transistor, 1-Element, K Band, Silicon, N-Channel, Hetero-junction FET, DIE; CategoryDiscrete semiconductor The transistor; File Size35KB，6 Pages; ManufacturerNEC Electronics

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NE1280100 Overview

RF Power Field-Effect Transistor, 1-Element, K Band, Silicon, N-Channel, Hetero-junction FET, DIE

Parameter Name	Attribute value
Maker	NEC Electronics
package instruction	DIE
Reach Compliance Code	unknown
Other features	HIGH RELIABILITY
Configuration	SINGLE
Minimum drain-source breakdown voltage	5 V
Maximum drain current (ID)	0.3 A
FET technology	HETERO-JUNCTION
highest frequency band	K BAND
JESD-30 code	R-XUUC-N
Number of components	1
Number of terminals	2
Operating mode	DEPLETION MODE
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	UNCASED CHIP
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	UPPER
transistor applications	AMPLIFIER
Transistor component materials	SILICON

	NE1280100	NE1280400
Description	RF Power Field-Effect Transistor, 1-Element, K Band, Silicon, N-Channel, Hetero-junction FET, DIE	RF Power Field-Effect Transistor, 1-Element, K Band, Silicon, N-Channel, Hetero-junction FET, DIE
Maker	NEC Electronics	NEC Electronics
package instruction	DIE	DIE
Reach Compliance Code	unknown	unknown
Other features	HIGH RELIABILITY	HIGH RELIABILITY
Configuration	SINGLE	SINGLE
Minimum drain-source breakdown voltage	5 V	5 V
Maximum drain current (ID)	0.3 A	1.2 A
FET technology	HETERO-JUNCTION	HETERO-JUNCTION
highest frequency band	K BAND	K BAND
JESD-30 code	R-XUUC-N	R-XUUC-N
Number of components	1	1
Number of terminals	2	5
Operating mode	DEPLETION MODE	DEPLETION MODE
Package body material	UNSPECIFIED	UNSPECIFIED
Package shape	RECTANGULAR	RECTANGULAR
Package form	UNCASED CHIP	UNCASED CHIP
Polarity/channel type	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	NO LEAD	NO LEAD
Terminal location	UPPER	UPPER
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON

Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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