PC3Q66Q
PC3Q66Q
s
Features
1. High collector-emitter voltage
( V
CEO
: 80V)
2. Half pitch type ( lead pitch : 1.27mm )
3. Isolation voltage between input and output
( V
iso
: 2 500V
rms
)
4. Applicable to infrared ray reflow
( 230˚C for MAX. 30seconds )
5. High reliability
Mini-flat Package, High
Collector-Emitter Voltage
Type Half Pitch Photocoupler
s
Outline Dimensions
10.3
±
0.3
16
( Unit : mm )
1.27
±
0.25
9
Model No.
Primary
side
mark
0.4
±
0.1
1
0.1
±
0.1
2.6
±
0.2
8 C0.4
Epoxy resin
0.2
±
0.05
4.4
±
0.2
5.3
±
0.3
s
Applications
1. Programmable controllers
0.5
+
0.4
-
0.2
7.0
+
0.2
-
0.7
s
Package Specifications
Model No.
PC3Q66Q
Package specifications
Taping reel diameter 330mm ( 1 000pcs. )
6
˚
Internal connection diagram
16
15
14
13
12
11
10
9
1 3 5 7
Anode
2 4 6 8
Cathode
9
11 13 15
Emitter
10 12 14 16
1
2
3
4
5
6
7
8
Collector
s
Absolute Maximum Ratings
Parameter
Forward current
*1
Peak forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Total power dissipation
*2
Isolation voltage
Operating temperature
Storage temperature
*3
Soldering temperature
Symbol
I
F
I
FM
V
R
P
V
CEO
V
ECO
I
C
P
C
P
tot
V
iso
T
opr
T
stg
T
sol
( Ta = 25˚C )
Rating
50
1
6
70
80
6
50
150
170
2.5
- 30 to + 100
- 40 to + 125
260
Unit
mA
A
V
mW
V
V
mA
mW
mW
kV
rms
˚C
˚C
˚C
Input
Output
Soldering area
*1 Pulse width <=100
µs,
Duty ratio : 0.001
*2 AC for 1 min., 40 to 60% RH, f = 60Hz
*3 For 10seconds
“
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
0.2mm or more
PC3Q66Q
s
Electro-optical Characteristics
Parameter
Forward current
Reverse current
Terminal capacitance
Collector dark current
Collector-emitter breakdown voltage
Emitter-collector breakdown voltage
Collector current
Collector-emitter saturation voltage
Isolation resistance
Floating capacitance
Rise time
Response time
Fall time
Symbol
V
F
I
R
C
t
I
CEO
BV
CEO
BV
ECO
I
C
V
CE ( sat )
R
ISO
C
f
t
r
t
f
Conditions
I
F
= 20mA
V
R
= 4V
V = 0, f = 1kH
Z
V
CE
= 20V, I
F
= 0
I
C
= 0.1mA, I
F
= 0
I
E
= 10
µ
A, I
F
= 0
I
F
= 1mA, V
CE
= 5V
I
F
= 20mA, I
C
= 1mA
DC500V 40 to 60% RH
V = 0, f = 1 MH
Z
V
CE
= 2V, I
C
= 2mA
R
L
= 100
Ω
MIN.
-
-
-
-
80
6
1
-
5 x 10
10
-
-
-
TYP.
1.2
-
30
-
-
-
-
0.1
10
11
0.6
6
8
( Ta = 25˚C )
MAX.
1.4
10
250
100
-
-
4
0.2
-
1.0
-
-
Unit
V
µ
A
pF
nA
V
V
mA
V
Ω
pF
µ
s
µ
s
Input
Output
Transfer
charac-
teristics
Fig. 1 Forward Current vs.
Ambient Temperature
60
Fig. 2 Diode Power Dissipation vs.
Ambient Temperature
Diode power dissipation P ( mW )
50
Forward current I
F
( mA )
100
40
80
70
60
40
30
20
10
0
- 30
20
0
- 30
0
25
5055
75
a
100
125
0
50 55
100
Ambient temperature T
( ˚C )
Ambient temperature T
a
( ˚C )
Fig. 3 Collector Power Dissipation vs.
Ambient Temperature
200
Collector power dissipation P
C
( mW )
Fig. 4 Power Dissipation vs.
Ambient Temperature
300
150
Power dissipation P
tot
( mW )
250
200
170
150
100
100
50
50
0
- 30
0
- 30
0
25
50
75
a
100
( ˚C )
125
0
25
50
75
100
Ambient temperature T
Ambient temperature T
a
( ˚C )
PC3Q66Q
Fig. 5 Peak Forward Current vs. Duty Ratio
10000
5000
Peak forward current I
FM
( mA )
2000
1000
500
200
100
50
20
10
5
5
Fig. 6 Forward Current vs.
Forward Voltage
100
50
Forward current I
F
( mA )
25˚C
50˚C
20
75˚C
10
5
- 25˚C
Pulse width <=100µ s
T
a
= 25˚C
0˚C
2
1
0.0
10
-3
2
5
5
10
- 2
2
Duty ratio
10
-1
2
5
1
0.5
1.0
1.5
2.0
Forward voltage V
F
( V )
2.5
3.0
Fig. 7 Current Tranfer Ratio vs.
Forward Current
500
V
CE
= 5V
T
a
= 25˚C
Current tranfer ratio CTR ( % )
400
Fig. 8 Collector Current vs. Collector
-emitter Voltage
50
Collector current I
C
( mA )
Pc (max)
I
F
= 30mA
20mA
T
a
= 25˚C
40
10mA
30
300
200
20
5mA
100
10
1mA
0
1
10
Forward current I
F
0
100
( mA )
0
2
4
6
8
10
Collector-emitter voltage V
CE
( V )
Fig. 9 Relative Current Transfer Ratio vs.
Ambient Temperature
150
I
F
= 1mA
Relative current transfer ratio ( % )
V
CE
= 5V
Fig.10 Collector-emitter Saturation Voltage vs.
Ambient Temperature
0.16
0.14
Collector-emitter saturation
voltage V
CE ( sat )
( V )
0.12
0.10
0.08
0.06
0.04
0.02
I
F
= 20mA
I
C
= 1mA
100
50
0
- 30
0
20
40
60
80
100
Ambient temperature T
a
( ˚C )
0.00
- 30
0
20
40
60
a
80
100
Ambient temperature T
( ˚C )
Application Circuits
NOTICE
qThe
circuit application examples in this publication are provided to explain representative applications of
SHARP devices and are not intended to guarantee any circuit design or license any intellectual property
rights. SHARP takes no responsibility for any problems related to any intellectual property right of a
third party resulting from the use of SHARP's devices.
qContact
SHARP in order to obtain the latest device specification sheets before using any SHARP device.
SHARP reserves the right to make changes in the specifications, characteristics, data, materials,
structure, and other contents described herein at any time without notice in order to improve design or
reliability. Manufacturing locations are also subject to change without notice.
qObserve
the following points when using any devices in this publication. SHARP takes no responsibility
for damage caused by improper use of the devices which does not meet the conditions and absolute
maximum ratings to be used specified in the relevant specification sheet nor meet the following
conditions:
(i) The devices in this publication are designed for use in general electronic equipment designs such as:
--- Personal computers
--- Office automation equipment
--- Telecommunication equipment [terminal]
--- Test and measurement equipment
--- Industrial control
--- Audio visual equipment
--- Consumer electronics
(ii)Measures such as fail-safe function and redundant design should be taken to ensure reliability and
safety when SHARP devices are used for or in connection with equipment that requires higher
reliability such as:
--- Transportation control and safety equipment (i.e., aircraft, trains, automobiles, etc.)
--- Traffic signals
--- Gas leakage sensor breakers
--- Alarm equipment
--- Various safety devices, etc.
(iii)SHARP devices shall not be used for or in connection with equipment that requires an extremely
high level of reliability and safety such as:
--- Space applications
--- Telecommunication equipment [trunk lines]
--- Nuclear power control equipment
--- Medical and other life support equipment (e.g., scuba).
qContact
a SHARP representative in advance when intending to use SHARP devices for any "specific"
applications other than those recommended by SHARP or when it is unclear which category mentioned
above controls the intended use.
qIf
the SHARP devices listed in this publication fall within the scope of strategic products described in the
Foreign Exchange and Foreign Trade Control Law of Japan, it is necessary to obtain approval to export
such SHARP devices.
qThis
publication is the proprietary product of SHARP and is copyrighted, with all rights reserved. Under
the copyright laws, no part of this publication may be reproduced or transmitted in any form or by any
means, electronic or mechanical, for any purpose, in whole or in part, without the express written
permission of SHARP. Express written permission is also required before any use of this publication
may be made by a third party.
qContact
and consult with a SHARP representative if there are any questions about the contents of this
publication.
115
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