DDR DRAM, 32MX8, CMOS, PBGA60,
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | Micron Technology |
Reach Compliance Code | unknown |
Maximum clock frequency (fCLK) | 133 MHz |
I/O type | COMMON |
interleaved burst length | 2,4,8 |
JESD-30 code | R-PBGA-B60 |
JESD-609 code | e0 |
memory density | 268435456 bit |
Memory IC Type | DDR DRAM |
memory width | 8 |
Number of terminals | 60 |
word count | 33554432 words |
character code | 32000000 |
Maximum operating temperature | 85 °C |
Minimum operating temperature | -40 °C |
organize | 32MX8 |
Output characteristics | 3-STATE |
Package body material | PLASTIC/EPOXY |
encapsulated code | BGA |
Encapsulate equivalent code | BGA60,9X12,40/32 |
Package shape | RECTANGULAR |
Package form | GRID ARRAY |
power supply | 2.5 V |
Certification status | Not Qualified |
refresh cycle | 8192 |
Continuous burst length | 2,4,8 |
Maximum standby current | 0.004 A |
Maximum slew rate | 0.35 mA |
Nominal supply voltage (Vsup) | 2.5 V |
surface mount | YES |
technology | CMOS |
Temperature level | INDUSTRIAL |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | BALL |
Terminal pitch | 0.8 mm |
Terminal location | BOTTOM |