RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-10
Parameter Name | Attribute value |
Maker | Mitsubishi |
package instruction | CHIP CARRIER, R-XQCC-N3 |
Contacts | 10 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Shell connection | SOURCE |
Configuration | SINGLE |
Minimum drain-source breakdown voltage | 30 V |
Maximum drain current (ID) | 1.5 A |
FET technology | METAL-OXIDE SEMICONDUCTOR |
highest frequency band | ULTRA HIGH FREQUENCY BAND |
JESD-30 code | R-XQCC-N3 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | ENHANCEMENT MODE |
Package body material | UNSPECIFIED |
Package shape | RECTANGULAR |
Package form | CHIP CARRIER |
Polarity/channel type | N-CHANNEL |
Certification status | Not Qualified |
surface mount | YES |
Terminal form | NO LEAD |
Terminal location | QUAD |
transistor applications | AMPLIFIER |
Transistor component materials | SILICON |