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HX6256NSNC

Description
Standard SRAM, 32KX8, 25ns, CMOS, CDFP28, 0.500 X 0.720 INCH, CERAMIC, DFP-28
Categorystorage    storage   
File Size176KB,12 Pages
ManufacturerHoneywell
Websitehttp://www.ssec.honeywell.com/
Download Datasheet Parametric View All

HX6256NSNC Overview

Standard SRAM, 32KX8, 25ns, CMOS, CDFP28, 0.500 X 0.720 INCH, CERAMIC, DFP-28

HX6256NSNC Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerHoneywell
Parts packaging codeDFP
package instructionDFP, FL28,.5
Contacts28
Reach Compliance Codeunknown
ECCN code3A001.A.2.C
Maximum access time25 ns
I/O typeCOMMON
JESD-30 codeR-CDFP-F28
JESD-609 codee0
length18.288 mm
memory density262144 bit
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
Number of terminals28
word count32768 words
character code32000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize32KX8
Output characteristics3-STATE
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeDFP
Encapsulate equivalent codeFL28,.5
Package shapeRECTANGULAR
Package formFLATPACK
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
Filter levelMIL-STD-883 Class S
Maximum seat height3.048 mm
Maximum standby current0.0005 A
Minimum standby current2.5 V
Maximum slew rate0.004 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formFLAT
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width12.7 mm
Military & Space Products
32K x 8 STATIC RAM—SOI
FEATURES
RADIATION
• Fabricated with RICMOS
IV Silicon on Insulator
(SOI) 0.75
µm
Process (L
eff
= 0.6
µm)
• Total Dose Hardness through 1x10
6
rad(SiO
2
)
• Neutron Hardness through 1x10
14
cm
-2
• Dynamic and Static Transient Upset Hardness
through 1x10
9
rad(Si)/s
• Dose Rate Survivability through 1x10
11
rad(Si)/s
• Soft Error Rate of <1x10
-10
upsets/bit-day
in Geosynchronous Orbit
• No Latchup
OTHER
• Listed On SMD#5962–95845
HX6256
• Fast Cycle Times
17 ns (Typical)
25 ns (-55 to 125°C) Read Write Cycle
• Asynchronous Operation
• CMOS or TTL Compatible I/O
• Single 5 V
±
10% Power Supply
• Packaging Options
– 28-Lead CFP (0.500 in. x 0.720 in.)
– 28-Lead DIP, MIL-STD-1835, CDIP2-T28
– 36-Lead CFP—Bottom Braze (0.630 in. x 0.650 in.)
– 36-Lead CFP—Top Braze (0.630 in. x 0.650 ins.)
– Multi-Chip Module (MCM)
GENERAL DESCRIPTION
The 32K x 8 Radiation Hardened Static RAM is a high
performance 32,768 word x 8-bit static random access
memory with industry-standard functionality. It is fabricated
with Honeywell’s radiation hardened technology, and is
designed for use in systems operating in radiation environ-
ments. The RAM operates over the full military temperature
range and requires only a single 5 V
±
10% power supply.
The RAM is available with either TTL or CMOS compatible
I/O. Power consumption is typically less than 15 mW/MHz
in operation, and less than 5 mW when de-selected. The
RAM read operation is fully asynchronous, with an associ-
ated typical access time of 14 ns at 5 V.
Honeywell’s enhanced SOI RICMOS
IV (Radiation In-
sensitive CMOS) technology is radiation hardened
through the use of advanced and proprietary design,
layout, and process hardening techniques. The RICMOS
IV process is a 5-volt, SIMOX CMOS technology with a 150
Å gate oxide and a minimum drawn feature size of 0.75
µm
(0.6
µm
effective gate length—L
eff
). Additional features
include tungsten via plugs, Honeywell’s proprietary
SHARP planarization process, and a lightly doped drain
(LDD) structure for improved short channel reliability. A 7
transistor (7T) memory cell is used for superior single
event upset hardening, while three layer metal power
bussing and the low collection volume SIMOX substrate
provide improved dose rate hardening.
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