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MA4E978L-272

Description
SILICON, LOW BARRIER SCHOTTKY, C-X BAND, MIXER DIODE
CategoryDiscrete semiconductor    diode   
File Size122KB,3 Pages
ManufacturerTE Connectivity
Websitehttp://www.te.com
Download Datasheet Parametric View All

MA4E978L-272 Overview

SILICON, LOW BARRIER SCHOTTKY, C-X BAND, MIXER DIODE

MA4E978L-272 Parametric

Parameter NameAttribute value
MakerTE Connectivity
package instructionO-CRDB-F3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Minimum breakdown voltage2 V
ConfigurationSINGLE
Maximum diode capacitance0.35 pF
Diode component materialsSILICON
Diode typeMIXER DIODE
frequency bandC BAND TO X BAND
JESD-30 codeO-CRDB-F3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Maximum power dissipation0.075 W
Certification statusNot Qualified
surface mountYES
technologySCHOTTKY
Terminal formFLAT
Terminal locationRADIAL
Schottky barrier typeLOW BARRIER
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