Power Field-Effect Transistor, 6A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 4 PIN
Parameter Name | Attribute value |
Maker | SIEMENS |
Parts packaging code | TO-220AB |
package instruction | SMALL OUTLINE, R-PSSO-G3 |
Contacts | 3 |
Reach Compliance Code | unknown |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 400 V |
Maximum drain current (ID) | 6 A |
Maximum drain-source on-resistance | 1 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
Maximum feedback capacitance (Crss) | 60 pF |
JESD-30 code | R-PSSO-G3 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Polarity/channel type | N-CHANNEL |
Maximum power consumption environment | 75 W |
Maximum pulsed drain current (IDM) | 24 A |
Certification status | Not Qualified |
surface mount | YES |
Terminal form | GULL WING |
Terminal location | SINGLE |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Maximum off time (toff) | 205 ns |
Maximum opening time (tons) | 105 ns |
BUZ205-E3044 | BUZ205-E3045 | BUZ205-E3046 | |
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Description | Power Field-Effect Transistor, 6A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 4 PIN | Power Field-Effect Transistor, 6A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN | Power Field-Effect Transistor, 6A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN |
Maker | SIEMENS | SIEMENS | SIEMENS |
Parts packaging code | TO-220AB | TO-220AB | TO-220AB |
package instruction | SMALL OUTLINE, R-PSSO-G3 | SMALL OUTLINE, R-PSSO-G2 | IN-LINE, R-PSIP-T3 |
Contacts | 3 | 3 | 3 |
Reach Compliance Code | unknown | unknown | unknown |
Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 400 V | 400 V | 400 V |
Maximum drain current (ID) | 6 A | 6 A | 6 A |
Maximum drain-source on-resistance | 1 Ω | 1 Ω | 1 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
Maximum feedback capacitance (Crss) | 60 pF | 60 pF | 60 pF |
JESD-30 code | R-PSSO-G3 | R-PSSO-G2 | R-PSIP-T3 |
Number of components | 1 | 1 | 1 |
Number of terminals | 3 | 2 | 3 |
Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C | 150 °C | 150 °C |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | SMALL OUTLINE | SMALL OUTLINE | IN-LINE |
Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL |
Maximum power consumption environment | 75 W | 75 W | 75 W |
Maximum pulsed drain current (IDM) | 24 A | 24 A | 24 A |
Certification status | Not Qualified | Not Qualified | Not Qualified |
surface mount | YES | YES | NO |
Terminal form | GULL WING | GULL WING | THROUGH-HOLE |
Terminal location | SINGLE | SINGLE | SINGLE |
transistor applications | SWITCHING | SWITCHING | SWITCHING |
Transistor component materials | SILICON | SILICON | SILICON |
Maximum off time (toff) | 205 ns | 205 ns | 205 ns |
Maximum opening time (tons) | 105 ns | 105 ns | 105 ns |