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BUZ205-E3044

Description
Power Field-Effect Transistor, 6A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 4 PIN
CategoryDiscrete semiconductor    The transistor   
File Size137KB,6 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
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BUZ205-E3044 Overview

Power Field-Effect Transistor, 6A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 4 PIN

BUZ205-E3044 Parametric

Parameter NameAttribute value
MakerSIEMENS
Parts packaging codeTO-220AB
package instructionSMALL OUTLINE, R-PSSO-G3
Contacts3
Reach Compliance Codeunknown
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage400 V
Maximum drain current (ID)6 A
Maximum drain-source on-resistance1 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)60 pF
JESD-30 codeR-PSSO-G3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum power consumption environment75 W
Maximum pulsed drain current (IDM)24 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)205 ns
Maximum opening time (tons)105 ns

BUZ205-E3044 Related Products

BUZ205-E3044 BUZ205-E3045 BUZ205-E3046
Description Power Field-Effect Transistor, 6A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 4 PIN Power Field-Effect Transistor, 6A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN Power Field-Effect Transistor, 6A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN
Maker SIEMENS SIEMENS SIEMENS
Parts packaging code TO-220AB TO-220AB TO-220AB
package instruction SMALL OUTLINE, R-PSSO-G3 SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3
Contacts 3 3 3
Reach Compliance Code unknown unknown unknown
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 400 V 400 V 400 V
Maximum drain current (ID) 6 A 6 A 6 A
Maximum drain-source on-resistance 1 Ω 1 Ω 1 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss) 60 pF 60 pF 60 pF
JESD-30 code R-PSSO-G3 R-PSSO-G2 R-PSIP-T3
Number of components 1 1 1
Number of terminals 3 2 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE IN-LINE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power consumption environment 75 W 75 W 75 W
Maximum pulsed drain current (IDM) 24 A 24 A 24 A
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES NO
Terminal form GULL WING GULL WING THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Maximum off time (toff) 205 ns 205 ns 205 ns
Maximum opening time (tons) 105 ns 105 ns 105 ns
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