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FRC9250H

Description
Power Field-Effect Transistor, 16A I(D), 200V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DIE
CategoryDiscrete semiconductor    The transistor   
File Size387KB,7 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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FRC9250H Overview

Power Field-Effect Transistor, 16A I(D), 200V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DIE

FRC9250H Parametric

Parameter NameAttribute value
MakerMicrosemi
Parts packaging codeDIE
package instructionUNCASED CHIP, X-XUUC-N
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Minimum drain-source breakdown voltage200 V
Maximum drain current (ID)16 A
Maximum drain-source on-resistance0.3 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeX-XUUC-N
JESD-609 codee0
Number of components1
Operating modeENHANCEMENT MODE
Package body materialUNSPECIFIED
Package shapeUNSPECIFIED
Package formUNCASED CHIP
Polarity/channel typeP-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formNO LEAD
Terminal locationUPPER
Transistor component materialsSILICON
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