FP10R12W1T3 datasheet, PDF - EEWORLD Datasheet

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FP10R12W1T3: DescriptionInsulated Gate Bipolar Transistor, 16A I(C), 1200V V(BR)CES, N-Channel, MODULE-23; CategoryDiscrete semiconductor The transistor; File Size427KB，11 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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FP10R12W1T3 Overview

Insulated Gate Bipolar Transistor, 16A I(C), 1200V V(BR)CES, N-Channel, MODULE-23

FP10R12W1T3 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Infineon
Parts packaging code	MODULE
package instruction	FLANGE MOUNT, R-XUFM-X23
Contacts	23
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	ISOLATED
Maximum collector current (IC)	16 A
Collector-emitter maximum voltage	1200 V
Configuration	COMPLEX
Gate-emitter maximum voltage	20 V
JESD-30 code	R-XUFM-X23
Number of components	7
Number of terminals	23
Maximum operating temperature	150 °C
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	78 W
Certification status	Not Qualified
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal off time (toff)	540 ns
Nominal on time (ton)	70 ns
VCEsat-Max	2.45 V

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Technische Information / technical information

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