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FRK150H1

Description
40A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
CategoryDiscrete semiconductor    The transistor   
File Size144KB,4 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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FRK150H1 Overview

40A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE

FRK150H1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerRenesas Electronics Corporation
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresRADIATION HARDENED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (Abs) (ID)40 A
Maximum drain current (ID)40 A
Maximum drain-source on-resistance0.055 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-204AE
JESD-30 codeO-MBFM-P2
JESD-609 codee0
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power consumption environment150 W
Maximum power dissipation(Abs)150 W
Maximum pulsed drain current (IDM)100 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formPIN/PEG
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Maximum off time (toff)800 ns
Maximum opening time (tons)1290 ns

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