SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
・With
Built-in Bias Resistors
・Simplify
Circuit Design
・Reduce
a Quantity of Parts and Manufacturing Process
・High
Packing Density.
・Suffix
U
: Qualified to AEC-Q101.
ex) KRC407E-RTK/HU
A
G
KRC407E~KRC409E
EPITAXIAL PLANAR NPN TRANSISTOR
E
B
D
3
2
1
DIM
A
B
C
D
E
F
G
J
C
H
J
MILLIMETERS
_
1.60 + 0.20
_
0.85+ 0.10
_
0.70 + 0.10
_
0.27 + 0.10
+ 0.10
1.60 _
_
0.39 + 0.10
_
1.00 + 0.10
0.50
_
0.13 + 0.05
H
F
F
EQUIVALENT CIRCUIT
OUT
R1
R2
BIAS RESISTOR VALUES
TYPE NO.
KRC407E
1. COMMON (EMITTER)
R1(kΩ)
10
22
47
R2(kΩ)
47
47
22
2. IN (BASE)
3. OUT (COLLECTOR)
IN
KRC408E
KRC409E
ESM
COMMON
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Output Voltage
KRC407E½409E
KRC407E
Input Voltage
KRC408E
KRC409E
Output Current
Power Dissipation
Junction Temperature
Storage Temperature Range
KRC407E½409E
I
O
P
D
T
j
T
stg
V
I
SYMBOL
V
O
RATING
50
30, -6
40, -7
40,-15
100
100
150
-55½150
mA
mW
℃
℃
V
UNIT
V
MARK SPEC
TYPE
MARK
KRC407E
NH
KRC408E
NI
KRC409E
NJ
Marking
Type Name
2019. 01. 08
Revision No : 3
1/4
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