MJ15022 datasheet, PDF - EEWORLD Datasheet

MJ15022: Description16A, 200V, NPN, Si, POWER TRANSISTOR, TO-204AA; CategoryDiscrete semiconductor The transistor; File Size178KB，4 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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16A, 200V, NPN, Si, POWER TRANSISTOR, TO-204AA

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Renesas Electronics Corporation
Reach Compliance Code	not_compliant
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	16 A
Collector-based maximum capacity	500 pF
Collector-emitter maximum voltage	200 V
Configuration	SINGLE
Minimum DC current gain (hFE)	5
JEDEC-95 code	TO-204AA
JESD-30 code	O-MBFM-P2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power consumption environment	250 W
Maximum power dissipation(Abs)	250 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	PIN/PEG
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	4 MHz
VCEsat-Max	4 V

	MJ15022	MJ15024
Description	16A, 200V, NPN, Si, POWER TRANSISTOR, TO-204AA	16A, 250V, NPN, Si, POWER TRANSISTOR, TO-204AA
Is it Rohs certified?	incompatible	incompatible
Maker	Renesas Electronics Corporation	Renesas Electronics Corporation
Reach Compliance Code	not_compliant	not_compliant
ECCN code	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR
Maximum collector current (IC)	16 A	16 A
Collector-based maximum capacity	500 pF	500 pF
Collector-emitter maximum voltage	200 V	250 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	5	5
JEDEC-95 code	TO-204AA	TO-204AA
JESD-30 code	O-MBFM-P2	O-MBFM-P2
JESD-609 code	e0	e0
Number of components	1	1
Number of terminals	2	2
Maximum operating temperature	200 °C	200 °C
Package body material	METAL	METAL
Package shape	ROUND	ROUND
Package form	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN
Maximum power consumption environment	250 W	250 W
Maximum power dissipation(Abs)	250 W	250 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	PIN/PEG	PIN/PEG
Terminal location	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	4 MHz	4 MHz
VCEsat-Max	4 V	4 V

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