SEMICONDUCTOR
Shandong Yiguang Electronic Joint stock Co., Ltd
BC856A-BC858C
PNP EPITAXIAL SILICON TRANSISTO
R
Package:
SOT-23
TECHNICAL DATA
SURFACE MOUNT SMALL SIGNAL TRANSISTORS
*
Epitaxial Die Construction
*
Ideally Suited Automatic Insertion
*
310mW Power Dissipation
*
Complementary PNP types Available(BC846-BC848)
*
For Switching and AF Amplifier Applications
ABSOLUTE MAXIMUM RATINGS at Ta=25℃
Characteristic
Collector-Base Voltage
BC856
BC857
BC858
Collector-Emitter Voltage
BC856
BC857
BC858
Emitter-Base Voltage
BC856
BC857
BC858
Collector Current
Collector Dissipation Ta=25℃*
Junction Temperature
Storage Temperature
Ic
P
D
Tj
Tstg
Vebo
Vceo
Vcbo
Symbol
Rating
-80
Unit
PIN:
STYLE
NO.1
1
2
3
B
E
C
-50
-30
-65
-45
-30
-5.0
-5.0
-5.0
-100
310
150
-65-150
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS at Ta=25℃
Characteristic
Collector-Base Breakdown Voltage
BC856
BC857
BC858
Collector-Emitter Breakdown Voltage BC856
BC857
BC858
Emitter-Base Breakdown Voltage
BVebo
BVceo
Symbol
BVcbo
Min
-80
-50
-30
-65
-45
-30
-5
V
Ie= -1.uA
Ic=0
V
Ic= -10mA Ib=0
Typ
Max
Unit
V
Test Conditions
Ic=-10uA
Ie=0
SEMICONDUCTOR
Shandong Yiguang Electronic Joint stock Co., Ltd
BC856A-BC858C
TECHNICAL DATA
PNP EPITAXIAL SILICON TRANSISTO
R
SURFACE MOUNT SMALL SIGNAL TRANSISTORS
ELECTRICAL CHARACTERISTICS at Ta=25℃（CONTINUED）
Characteristic
DC Current Gain
Current Gain GroupA
B
C
Current Gain GroupA
B
C
Collector-Emitter Saturation Voltage
Vce(sat)
H
FE
125
220
420
Symbol
Min
Typ
90
150
270
180
290
520
250
475
800
-300
-650
Base-Emitter Saturation Voltage
Vbe(sat)
-700
-900
Base-Emitter Voltage
Vbe(on)
-600
-750
-820
Output Capacitance
Gain Bandwidth Product
Cob
fT
3.5
100
6.0
PF
MHz
mV
mV
mV
mV
Ic= -10mA Ib= -0.5mA
Ic= -100mA Ib= -5.0mA
Ic= -10mA Ib= -0.5mA
Ic= -100mA Ib= -5.0mA
Vce= -5.0V Ic= -2.0mA
Vce= -5.0V Ic= -10mA
Vcb= -10V
Vce=-5V
f=100MHz
Noise Figure
NF
10
dB
Vce= -5V Ic= -200uA
R
s
=2KΩ
f=1MHz
△f=200Hz
f=1MHz
Ic=-10mA
Vce=-5.0V Ic=-10uA
Vce=-5.0V Ic=-2.0mA
Max
Unit
Test Conditions
*
#
Total Device Dissipation : FR=1
X
0.75
X
0.062in Board,Derate 25℃.
Pulse Test : Pulse Width
≤300uS,Duty
cycle
≤2%
DEVICE MARKING:
BC856ALT1=3A
BC856BLT1=3B
BC857ALT1=3E
BC857BLT1=3F
BC857CLT1=3G
BC858ALT1=3J
BC858BLT1=3K
BC858CLT1=3L
SEMICONDUCTOR
Shandong Yiguang Electronic Joint stock Co., Ltd
BC856A-BC858C
PNP EPITAXIAL SILICON TRANSISTO
R
TECHNICAL DATA
ＢＣ８５７／ＢＣ８５８
2.0
–1.0
h
FE
, NORMALIZED DC CURRENT GAIN
1.5
V
CE
= –10 V
V, VOLTAGE (VOLTS)
–0.9
–0.8
–0.7
–0.6
–0.5
–0.4
–0.3
–0.2
–0.1
T
A
= 25°C
V
BE(sat)
@ I
C
/I
B
=10
T
A
= 25°C
1.0
0.7
V
BE(on)
@ V
CE
= –10 V
0.5
0.3
V
CE(sat)
@ I
C
/I
B
= 10
–0.1
–0.2
–0.5
–1.0
–2.0
–5.0
–10
–20
–50
–100
0.2
–0.2
–0.5
–1.0
–2.0
–5.0
–10
–20
–50
–100
–200
0
I
C
, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
θ
VB
, TEMPERATURE COEFFICIENT (mV/ °C)
I
C
, COLLECTOR CURRENT (mAdc)
Figure 2. “Saturation” and “On” Voltages
V
CE
, COLLECTOR– EMITTER VOLTAGE (V)
–2.0
1.0
T
A
= 25°C
–1.6
–55°C to +125°C
1.2
1.6
–1.2
2.0
–0.8
I
C
=
–10 mA
I
C
= –50 mA
I
C
= –200 mA
I
C
= –100 mA
2.4
–0.4
I
C
= –20 mA
2.8
0
–0.02
–0.1
–1.0
–10
–20
–0.2
–1.0
–10
–100
I
B
, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
I
C
, COLLECTOR CURRENT (mA)
Figure 4. Base–Emitter Temperature Coefficient
400
300
10.0
f
T
, CURRENT– GAIN – BANDWIDTH
PRODUCT (MHz)
C
ib
7.0
200
T
A
=25°C
5.0
V, VOLTAGE (VOLTS)
100
80
V
CE
=–10V
T
A
= 25°C
3.0
C
ob
60
40
30
20
2.0
1.0
–0.4
–0.6
–1.0
–2.0
–4.0
–6.0
–10
–20 –30 –40
–0.5
–1.0
–2.0
–3.0
–5.0
–10
–20
–30
–50
V
R
, REVERSE VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mAdc)
Figure 5. Capacitances
Figure 6. Current–Gain – Bandwidth Product
SEMICONDUCTOR
Shandong Yiguang Electronic Joint stock Co., Ltd
BC856A-BC858C
PNP EPITAXIAL SILICON TRANSISTO
R
TECHNICAL DATA
BC856
h
FE
, DC CURRENT GAIN (NORMALIZED)
–1.0
V
CE
= –5.0V
T
A
= 25°C
2.0
1.0
0.5
0.2
–0.1–0.2
–1.0–2.0 –5.0–10–20 –50–100–200
I
C
, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
T
J
= 25°C
–0.8
V
BE(sat)
@ I
C
/I
B
= 10
–0.6
–0.4
–0.2
V
CE(sat)
@ I
C
/I
B
= 10
0
–0.2
–0.5 –1.0 –2.0
–5.0 –10 –20
–50 –100 –200
V
BE
@V
CE
= –5.0 V
I
C
, COLLECTOR CURRENT (mA)
Figure 7. DC Current Gain
V
CE
, COLLECTOR– EMITTER VOLTAGE (VOLTS)
Figure 8. “On” Voltage
θ
VB
, TEMPERATURE COEFFICIENT (mV/°C)
–2.0
–1.6
–1.2
–0.8
–0.4
T
J
= 25°C
0
–0.02
–0.05 –0.1 –0.2
–0.5 –1.0 –2.0
–5.0
–10 –20
I
C
=
–10 mA
–20mA
–50mA
–100mA –200mA
–1.0
–1.4
–1.8
–2.2
–2.6
–3.0
–0.2
θ
VB
for V
BE
–55°C to 125°C
–0.5 –1.0 –2.0
–5.0
–10 –20
–50 –100 –200
I
B
, BASE CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 9. Collector Saturation Region
Figure 10. Base–Emitter Temperature Coefficient
f
T
, CURRENT– GAIN – BANDWIDTH PRODUCT T
40
C, CAPACITANCE (pF)
20
T
J
= 25°C
C
ib
500
200
100
50
20
V
CE
= –5.0 V
10
8.0
6.0
4.0
2.0
–0.1–0.2 –0.5
C
ob
–1.0 –2.0
–5.0 –10 –20
–50 –100
–1.0
–10
–100
V
R
, REVERSE VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
Figure 11. Capacitance
Figure 12. Current–Gain – Bandwidth Product
SEMICONDUCTOR
Shandong Yiguang Electronic Joint stock Co., Ltd
BC856A-BC858C
PNP EPITAXIAL SILICON TRANSISTO
R
TECHNICAL DATA
BC856A-BC858C
1.0
r( t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
0.7
0.5
0.3
0.2
D=0.5
0.2
SINGLE PULSE
0.1
0.1
0.07
0.05
0.03
0.02
0.01
0.1
0.05
SINGLE PULSE
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
Z
θJC
(t) = r(t) R
θJC
R
θJC
= 83.3°C/W MAX
Z
θJA
(t) = r(t) R
θJA
R
θJA
= 200°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
– T
C
= P
(pk)
R
θJC
(t)
0.2
0.5
1.0
2.0
5.0
10
20
t, TIME (ms)
50
100
200
500
1.0k 2.0k
5.0k
10k
Figure 13. Thermal Response
–200
1s
I
C
, COLLECTOR CURRENT (mA)
3 ms
–100
–50
T
A
= 25°C
T
J
= 25°C
–10
–5.0
BC558
BC557
BC556
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
–2.0
–1.0
–0.5
–10
–30 –45 –65 –100
V
CE
, COLLECTOR–EMITTER VOLTAGE (V)
Figure 14. Active Region Safe Operating Area
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