Agilent MSA-0686
Cascadable Silicon Bipolar
MMIC Amplifier
Data Sheet
Features
• Cascadable 50
Ω
Gain Block
• Low Operating Voltage:
3.5 V Typical V
d
Description
The MSA-0686 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost,
surface mount plastic package.
This MMIC is designed for use as a
general purpose 50
Ω
gain block.
Applications include narrow and
broad band IF and RF amplifiers
in commercial and industrial
applications.
The MSA-series is fabricated using
Agilent’s 10 GHz f
T
, 25 GHz f
MAX
,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
86 Plastic Package
• 3 dB Bandwidth:
DC to 0.8 GHz
• High Gain:
18.5 dB Typical at 0.5 GHz
• Low Noise Figure:
3.0 dB Typical at 0.5 GHz
• Surface Mount Plastic
Package
• Tape-and-Reel Packaging
Available
• Lead-free Option Available
Typical Biasing Configuration
R
bias
V
CC
> 5 V
RFC (Optional)
4
C
block
3
IN
1
MSA
C
block
OUT
V
d
= 3.5 V
2
2
MSA-0686 Absolute Maximum Ratings
Parameter
Device Current
Power Dissipation
[2,3]
RF Input Power
Junction Temperature
Storage Temperature
Absolute Maximum
[1]
50 mA
200 mW
+13 dBm
150°C
–65 to 150°C
Thermal Resistance
[2]
:
θ
jc
= 120°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
CASE
= 25°C.
3. Derate at 8.3 mW/°C for T
C
> 126°C.
Electrical Specifications
[1]
, T
A
= 25°C
Symbol
G
P
∆G
P
f
3 dB
VSWR
NF
P
1 dB
IP
3
t
D
V
d
dV/dT
Parameters and Test Conditions: I
d
= 16 mA, Z
O
= 50
Ω
Power Gain (|S
21
|
2
)
Gain Flatness
3 dB Bandwidth
Input VSWR
Output VSWR
50
Ω
Noise Figure
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
Device Voltage
Device Voltage Temperature Coefficient
f = 0.1 to 1.5 GHz
f = 0.1 to 1.5 GHz
f = 0.5 GHz
f = 0.5 GHz
f = 0.5 GHz
f = 0.5 GHz
f = 0.1 GHz
f = 0.5 GHz
f = 0.1 to 0.5 GHz
Units
dB
Min.
16.5
Typ.
20.0
18.5
±0.7
0.8
1.7:1
1.7:1
Max.
dB
GHz
dB
dBm
dBm
psec
V
mV/°C
2.8
3.0
2.0
14.5
225
3.5
–8.0
4.2
Notes:
1. The recommended operating current range for this device is 12 to 20 mA. Typical performance as a function of current
is on the following page.
Ordering Information
Part Numbers
MSA-0686-BLK
MSA-0686-BLKG
MSA-0686-TR1
MSA-0686-TR1G
MSA-0686-TR2
MSA-0686-TR2G
No. of Devices
100
100
1000
1000
4000
1000
Comments
Bulk
Bulk
7" Reel
7" Reel
13" Reel
13" Reel
Note:
Order part number with a “G” suffix if lead-free option
is desired.
3
MSA-0686 Typical Scattering Parameters (Z
O
= 50
Ω,
T
A
= 25°C, I
d
= 16 mA)
Freq.
GHz
S
11
Mag
Ang
dB
S
21
Mag
Ang
dB
S
12
Mag
Ang
Mag
S
22
Ang
k
0.1
0.2
0.3
0.4
0.5
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
.06
.06
.07
.08
.08
.09
.12
.15
.25
.34
.43
.49
.56
.61
.70
–175
–169
–164
–158
–154
–152
–152
–154
–171
171
155
140
128
118
99
20.1
19.8
19.4
19.1
18.7
18.0
17.2
16.3
14.0
11.9
9.8
8.0
6.4
5.0
2.4
10.08
9.77
9.35
8.98
8.58
7.94
7.25
6.51
5.01
3.94
3.09
2.51
2.09
1.78
1.32
170
161
152
144
135
128
114
102
76
56
42
28
15
3
–18
–23.3
–23.2
–22.5
–22.2
–21.6
–21.1
–20.3
–19.5
–17.6
–16.1
–15.9
–15.3
–15.1
–14.9
–14.7
.069
.069
.075
.078
.083
.088
.097
.106
.133
.157
.161
.171
.175
.180
.185
4
8
13
16
18
21
25
25
22
19
16
11
6
3
–2
.04
.07
.10
.13
.15
.18
.21
.24
.27
.27
.27
.26
.25
.24
.24
–84
–103
–113
–123
–131
–140
–155
–168
165
147
134
124
118
115
118
1.05
1.05
1.03
1.02
1.01
1.01
1.00
0.99
0.99
1.01
1.06
1.10
1.13
1.15
1.16
Typical Performance, T
A
= 25°C
(unless otherwise noted)
24
21
18
25
20
Gp (dB)
T
C
= +85°C
T
C
= +25°C
20 T
C
= –25°C
19
18
17
G
P
G
p
(dB)
15
12
9
6
3
0
0.1
0.3 0.5
1.0
3.0
6.0
FREQUENCY (GHz)
I
d
= 12 mA
I
d
= 16 mA
I
d
= 25 mA
Gain Flat to DC
5
0
0
1
2
3
V
d
(V)
4
5
I
d
(mA)
15
5
5
NF
P
1 dB
4
3
2
1
0
–25
0
+25
+55
+85
TEMPERATURE (°C)
P
1 dB
(dBm)
10
4
3
2
1
0
Figure 1. Typical Power Gain vs.
Frequency, T
A
= 25°C.
Figure 2. Device Current vs. Voltage.
Figure 3. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 1.0 GHz,
I
d
= 16 mA.
12
I
d
= 30 mA
8
4.0
3.5
I
d
= 20 mA
P
1 dB
(dBm)
NF (dB)
4
I
d
= 16 mA
3.0
0
I
d
= 12 mA
–4
0.1
2.5
I
d
= 12 mA
I
d
= 16 mA, 30 mA
2.0
0.2 0.3
0.5
1.0
2.0
4.0
0.1
0.2 0.3
0.5
FREQUENCY (GHz)
I
d
= 20 mA
1.0
2.0
4.0
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 5. Noise Figure vs. Frequency.
NF (dB)
86 Plastic Package Dimensions
0.51
±
0.13
(0.020
±
0.005)
GROUND
4
RF INPUT
1
A06
45°
RF OUTPUT
AND DC BIAS
C
L
3
2.34
±
0.38
(0.092
±
0.015)
2
GROUND
2.67
±
0.38
(0.105
±
0.15)
1.52
±
0.25
(0.060
±
0.010)
5° TYP.
0.203
±
0.051
(0.006
±
0.002)
0.66
±
0.013
(0.026
±
0.005)
0.30 MIN
(0.012 MIN)
8° MAX
0° MIN
2.16
±
0.13
(0.085
±
0.005)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
www.agilent.com/semiconductors
For product information and a complete list of
distributors, please go to our web site.
For technical assistance call:
Americas/Canada: +1 (800) 235-0312 or
(916) 788-6763
Europe: +49 (0) 6441 92460
China: 10800 650 0017
Hong Kong: (65) 6756 2394
India, Australia, New Zealand: (65) 6755 1939
Japan: (+81 3) 3335-8152(Domestic/International), or
0120-61-1280(Domestic Only)
Korea: (65) 6755 1989
Singapore, Malaysia, Vietnam, Thailand, Philippines,
Indonesia: (65) 6755 2044
Taiwan: (65) 6755 1843
Data subject to change.
Copyright © 2005 Agilent Technologies, Inc.
Obsoletes 5965-9588E
March 29, 2005
5989-2757EN
Microcontroller MCU
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