FT4016.P
INSULATED HIGH COMMUTATION TRIAC
On-State Current
Gate Trigger Current
≤
50 mA (16)
Off-State Voltage
600 V ÷ 800 V
INSULATED TO3P
40 Amp
1
T1 (1)
2
3
G (3)
_
* Standard current TRIAC
* Low thermal resistance with clip
bounding
* Low thermal resistance isolation
ceramic for FT....P
This series of
TRIACs
uses a high performance PNPN
technology.
These parts are intended for general purpose AC
switching applications with highly inductive loads. The
FT....P series provides an isolated tab (rated at
2500 Vrms).
T2 (2)
Absolute Maximum Ratings, according to IEC publication No. 134
SYMBOL
PARAMETER
RMS On-state Current (full sine wave)
Non-repetitive On-State Current
Non-repetitive On-State Current
Fusing Current
Peak Gate Current
Average Gate Power Dissipation
Critical rate of rise of on-state current
Operating Temperature
Storage Temperature
Soldering Temperature
10s max
CONDITIONS
All Conduction Angle, T
c
= 80 °C
Full Cycle, 60 Hz (t = 16.7 ms)
Full Cycle, 50 Hz (t = 20 ms)
tp = 10 ms, Half Cycle
20 µs max.
Tj = 125 °C
I
G
= 2x I
GT
, tr
≤100ns
f = 120 Hz, Tj = 125 °C
Tj = 125 °C
Value
40
420
400
1000
8
1
50
(-40 +125)
(-40 +150)
260
Unit
A
A
A
A
2
s
A
W
A/µs
°C
°C
°C
I
T(RMS)
I
TSM
I
TSM
I
2
t
I
GM
P
G(AV)
dI/dt
T
j
T
stg
T
sld
SYMBOL
PARAMETER
Repetitive Peak Off State Voltage
VOLTAGE
M
600
N
800
Unit
V
V
DRM
/V
RRM
May - 10
FT4016.P
INSULATED HIGH COMMUTATION TRIAC
Electrical Characteristics
SYMBOL
PARAMETER
CONDITIONS
Quadrant
SENSITIVITY
16
50
1.3
0.2
Unit
mA
V
V
mA
mA
mA
V/µs
I
GT (1)
V
GT
V
GD
I
H (2)
I
L
dV/dt
(2)
V
TM (2)
V
t (o) (2)
r
d (2)
Gate Trigger Current
Gate Trigger Voltage
Gate Non Trigger Voltage
Holding Current
Latching Current
Critical Rate of Voltage Rise
V
D
= 12 V
DC
, R
L
= 33Ω,
T
j
= 25 °C
Q1÷Q3 MAX
V
D
= 12 V
DC
, R
L
= 33Ω,
T
j
= 25 °C
Q1÷Q3 MAX
V
D
= V
DRM
, R
L
= 3.3 KΩ, T
j
= 125 °C
Q1÷Q3 MIN
I
T
=100 mA,Gate open, T
j
= 25 °C
I
G
= 1.2 I
GT
, T
j
=
25 °C
V
D
= 0.67 x V
DRM
, Gate open
MAX
Q1, Q3
MAX
80
80
160
500
1.55
0.85
10
5
20
0.9
Q2
MAX
MIN
MAX
MAX
MAX
T
j
= 125 °C
On-state Voltage
Threshold Voltage
Dynamic resistance
I
TM
= 60 Amp, tp = 380 µs,T
j
= 25 °C
T
j
= 125 °C
T
j
= 125 °C
V
D
= V
DRM
,
V
R
= V
RRM
,
V
V
mΩ
mA
µA
°C/W
I
DRM
/I
RRM
Off-State Leakage Current
R
th(j-c)
Thermal Resistance
Junction-Case
T
j
= 125 °C
T
j
= 25 °C
MAX
MAX
for AC 360° conduction angle
(1) Minimum I
GT
is guaranted at 5% of I
GT
max.
(2) For either polarity of electrode MT2 voltage with reference to electrode MT1.
PART NUMBER INFORMATION
F
FAGOR
TRIAC
CURRENT
T
40
16
M
P
00 TU
PACKAGING
FORMING
CASE
VOLTAGE
SENSITIVITY
May - 10
FT4016.P
INSULATED HIGH COMMUTATION TRIAC
Fig. 1: Maximum power dissipation versus
RMS on-state current (full cycle).
P (W)
50
45
40
40
a =180°
Fig. 2: RMS on-state current versus case
temperature (full cycle).
IT(RMS)(A)
35
30
30
25
20
15
20
10
10
5
0
0
5
10 15 20 25 30 35 40
IT(RMS)(A)
0
0
25
50
75
100
125
Tc(°C)
Fig. 3: On-state characteristics (maximum
values)
ITM (A)
400
450
400
100
T
j
max
Fig. 4: Surge peak on-state current
versus number of cycles
I TSM(A)
t=20ms
One cycle
350
300
250
Non repetitive
Tj initial = 25 °C
T
j
= 25 °C
200
150
100
50
Repetitive
Tc = 70 °C
10
VTM (V)
1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Fig. 5: Non repetitive surge peak on-state
current for a sinusoidal pulse with width:
2
tp < 10 ms, and corresponding value of I t.
I
TSM
(A). I t (A s)
3000
Tj initial = 25 °C
0
1
10
100
Number of cycles
1000
Fig. 7: Relative variation of gate trigger
current, holding current and latching versus
junction temperature (typical values)
IGT,IH,IL[Tj]/IGT,IH,IL.[Tj=25ºC]
2
2
2.5
It
2
1000
2.0
IGT
I
TSM
1.5
I
H
&I
L
1.0
0.5
100
0.01
0.10
1.00
tp(ms)
10.00
0
-40 -20 0 20 40 60 80 100 120 140
Tj(ºC)
May - 10
FT4016.P
INSULATED HIGH COMMUTATION TRIAC
PACKAGE MECHANICAL DATA: INSULATED TO3P
A
N
H
L
B
K
G
F
M
C
D
J
J
E
DIMENSIONS (mm)
A
MAX
TYP
MIN
4.4 1.45 14.35 0.5
2.7 15.8 20.4 15.1 5.4
3.4 4.08 1.20
B
C
D
E
F
G
H
J
K
L
M
N
4.6 1.55 15.6 0.7
2.9 16.5 21.1 15.5 5.65 3.65 4.17 1.40
4.60
Mounting Torque
1 N.m
(*) Limiting values and life support applications, see Web page.
May - 10
京公网安备 11010802033920号
EEWORLD
