MITSUBISHI <INTELLIGENT POWER MODULES>
PM75RL1B060
FLAT-BASE TYPE
INSULATED PACKAGE
PM75RL1B060
FEATURE
Inverter + Brake + Drive & Protection IC
a) Adopting new 5th generation Full-Gate CSTBT
TM
chip
b) The over-temperature protection which detects the chip sur-
face temperature of CSTBT
TM
is adopted.
c) Error output signal is possible from all each protection up-
per and lower arm of IPM.
d) Compatible L-series package.
• 3φ 75A, 600V Current-sense and temperature sense
IGBT type inverter
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for, short-
circuit, over-temperature & under-voltage (P-F
O
available
from upper arm devices)
• UL Recognized
APPLICATION
General purpose inverter, servo drives and other motor controls
PACKAGE OUTLINES
Dimensions in mm
L A B E L
120
7
19.75
3.25
16
3-2
106
±0.25
66.5
16
3-2
16
3-2
15.25
6-2
1.5
1
17
16
1.5
3
4 4
25.75
35
55
25
1
5
9
13
19
2-φ5.5
MOUNTING HOLES
4 4
B
U
V
W
4 4
2.5
19.5
22
7.75
23
4 4
4 4
4 4
4-
φ
2
1
2-φ2.5
11.5
9.5
27.5
N
P
.5
9.5
23
98.25
19-■0.5
23
Terminal code
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
VUPC
UFO
UP
VUP1
VVPC
VFO
VP
VVP1
VWPC
WFO
11.
12.
13.
14.
15.
16.
17.
18.
19.
WP
VWP1
VNC
VN1
Br
UN
VN
WN
Fo
May 2009
1
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75RL1B060
FLAT-BASE TYPE
INSULATED PACKAGE
INTERNAL FUNCTIONS BLOCK DIAGRAM
Br Fo
1.5k
V
NC
W
N
V
N1
V
N
U
N
W
P
V
WP1
V
WPC
WF
O
V
P
V
VPC
V
VP1
VF
O
U
P
V
UPC
V
UP1
UF
O
1.5k
1.5k
1.5k
Gnd In
Fo Vcc
Gnd In
Fo Vcc
Gnd In
Fo Vcc
Gnd In
Fo Vcc
Gnd In
Fo Vcc
Gnd In
Fo Vcc
Gnd In
Fo Vcc
Gnd
Si Out
OT
Gnd
Si Out
OT
Gnd
Si Out
OT
Gnd
Si Out
OT
Gnd
Si Out
OT
Gnd
Si Out
OT
Gnd
Si Out
OT
B
N
W
V
U
P
MAXIMUM RATINGS
(Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol
V
CES
±I
C
±I
CP
P
C
T
j
Parameter
Collector-Emitter Voltage
Collector Current
Collector Current (Peak)
Collector Dissipation
Junction Temperature
Condition
V
D
= 15V, V
CIN
= 15V
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
(Note-1)
(Note-1)
Ratings
600
75
150
337
–20 ~ +150
Unit
V
A
A
W
°C
*: Tc measurement point is just under the chip.
BRAKE PART
Symbol
V
CES
I
C
I
CP
P
C
I
F
V
R(DC)
T
j
Parameter
Collector-Emitter Voltage
Collector Current
Collector Current (Peak)
Collector Dissipation
FWDi Forward Current
FWDi Rated DC Reverse Voltage
Junction Temperature
Condition
V
D
= 15V, V
CIN
= 15V
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
(Note-1)
(Note-1)
Ratings
600
50
100
284
50
600
–20 ~ +150
Unit
V
A
A
W
A
V
°C
CONTROL PART
Symbol
V
D
V
CIN
V
FO
I
FO
Parameter
Supply Voltage
Input Voltage
Fault Output Supply Voltage
Fault Output Current
Condition
Applied between : V
UP1
-V
UPC
, V
VP1
-V
VPC
V
WP1
-V
WPC
, V
N1
-V
NC
Applied between : U
P
-V
UPC
, V
P
-V
VPC
, W
P
-V
WPC
U
N
• V
N
• W
N
• B
r
-V
NC
Applied between : U
FO
-V
UPC
, V
FO
-V
VPC
, W
FO
-V
WPC
F
O
-V
NC
Sink current at U
FO
, V
FO
, W
FO
, F
O
terminals
Ratings
20
20
20
20
Unit
V
V
V
mA
May 2009
2
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75RL1B060
FLAT-BASE TYPE
INSULATED PACKAGE
TOTAL SYSTEM
Parameter
Supply Voltage Protected by
V
CC(PROT)
SC
V
CC(surge)
Supply Voltage (Surge)
Storage Temperature
T
stg
Isolation Voltage
V
iso
Symbol
Condition
V
D
= 13.5 ~ 16.5V
Inverter Part, T
j
= +125°C Start
Applied between : P-N, Surge value
60Hz, Sinusoidal, Charged part to Base, AC 1 min.
Ratings
400
500
–40 ~ +125
2500
Unit
V
V
°C
V
rms
THERMAL RESISTANCES
Symbol
R
th(j-c)Q
R
th(j-c)F
R
th(j-c)Q
R
th(j-c)F
R
th(c-f)
Parameter
Junction to case Thermal
Resistances
Contact Thermal Resistance
Condition
Inverter IGBT part (per 1 element)
Inverter FWDi part (per 1 element)
Brake IGBT part
Brake FWDi upper part
Case to fin, (per 1 module)
Thermal grease applied
(Note-1)
(Note-1)
(Note-1)
(Note-1)
(Note-1)
Min.
—
—
—
—
—
Limits
Typ.
—
—
—
—
—
Max.
0.37
0.63
0.44
0.75
0.038
Unit
°C/W
* If you use this value, R
th(f-a)
should be measured just under the chips.
(Note-1) Tc (under the chip) measurement point is below.
arm
axis
X
Y
UP
IGBT FWDi
27.9
27.9
0.2
–6.2
VP
IGBT FWDi
66.2
66.2
0.2
–6.2
WP
IGBT FWDi
85.8
85.8
0.2
–6.2
UN
IGBT FWDi
37.4
37.4
–0.8
5.4
VN
IGBT FWDi
56.1
56.1
–0.8
5.4
WN
IGBT FWDi
74.7
74.7
–0.8
5.4
(unit : mm)
BR
Di
IGBT
21.3
20.2
5.8
–7.4
Bottom view
ELECTRICAL CHARACTERISTICS
(Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol
V
CE(sat)
V
EC
t
on
t
rr
t
c(on)
t
off
t
c(off)
I
CES
Parameter
Collector-Emitter Saturation
Voltage
FWDi Forward Voltage
Condition
V
D
= 15V, I
C
= 75A
V
CIN
= 0V, Pulsed
(Fig. 1)
–I
C
= 75A, V
D
= 15V, V
CIN
= 15V
V
D
= 15V, V
CIN
= 0V↔15V
V
CC
= 300V, I
C
= 75A
T
j
= 125°C
Inductive Load
V
CE
= V
CES
, V
D
= 15V
(Fig. 5)
T
j
= 25°C
T
j
= 125°C
(Fig. 2)
Min.
—
—
—
0.3
—
—
—
—
—
—
Limits
Typ.
1.75
1.75
1.7
0.8
0.4
0.4
1.0
0.3
—
—
Max.
2.35
2.35
2.8
2.0
0.8
1.0
2.3
1.0
1
10
Unit
V
V
Switching Time
µs
(Fig. 3,4)
T
j
= 25°C
T
j
= 125°C
Collector-Emitter Cutoff
Current
mA
May 2009
3
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75RL1B060
FLAT-BASE TYPE
INSULATED PACKAGE
BRAKE PART
Symbol
V
CE(sat)
V
EC
I
CES
Parameter
Collector-Emitter Saturation
Voltage
FWDi Forward Voltage
Collector-Emitter Cutoff
Current
Condition
V
D
= 15V, I
C
= 50A
V
CIN
= 0V, Pulsed
(Fig. 1)
–I
C
= 50A, V
CIN
= 15V, V
D
= 15V
V
CE
= V
CES
, V
D
= 15V
(Fig. 5)
T
j
= 25°C
T
j
= 125°C
(Fig. 2)
T
j
= 25°C
T
j
= 125°C
Min.
—
—
—
—
—
Limits
Typ.
1.75
1.75
1.7
—
—
Max.
2.35
2.35
2.8
1
10
Unit
V
V
mA
CONTROL PART
Symbol
I
D
V
th(ON)
V
th(OFF)
SC
t
off(SC)
OT
OT
(hys)
UV
UV
r
I
FO(H)
I
FO(L)
t
FO
Parameter
Circuit Current
Input ON Threshold Voltage
Input OFF Threshold Voltage
Short Circuit Trip Level
Short Circuit Current Delay
Time
Over Temperature Protection
Supply Circuit Under-Voltage
Protection
Fault Output Current
Minimum Fault Output Pulse
Width
V
D
= 15V, V
CIN
= 15V
Condition
V
N1
-V
NC
V
*P1
-V
*PC
Min.
—
—
1.2
1.7
150
100
—
135
—
11.5
—
—
—
1.0
Limits
Typ.
8
2
1.5
2.0
—
—
0.2
—
20
12.0
12.5
—
10
1.8
Max.
16
4
1.8
2.3
—
—
—
—
—
12.5
—
0.01
15
—
Unit
mA
V
A
µs
°C
V
mA
ms
Applied between : U
P
-V
UPC
, V
P
-V
VPC
, W
P
-V
WPC
U
N
• V
N
• W
N
• B
r
-V
NC
Inverter part
–20
≤
T
j
≤
125°C, V
D
= 15V (Fig. 3,6)
Brake part
V
D
= 15V
Detect Temperature of IGBT chip
–20
≤
T
j
≤
125°C
V
D
= 15V, V
CIN
= 15V
V
D
= 15V
(Fig. 3,6)
Trip level
Hysteresis
Trip level
Reset level
(Note-2)
(Note-2)
(Note-2) Fault output is given only when the internal SC, OT & UV protections schemes of either upper or lower arm device operate to
protect it.
MECHANICAL RATINGS AND CHARACTERISTICS
Symbol
—
—
Parameter
Mounting torque
Weight
Mounting part
—
Condition
screw : M5
Min.
2.5
—
Limits
Typ.
3.0
340
Max.
3.5
—
Unit
N•m
g
RECOMMENDED CONDITIONS FOR USE
Symbol
V
CC
V
D
V
CIN(ON)
V
CIN(OFF)
f
PWM
t
dead
Parameter
Supply Voltage
Control Supply Voltage
Input ON Voltage
Input OFF Voltage
PWM Input Frequency
Arm Shoot-through Blocking
Time
Condition
Applied across P-N terminals
Applied between : V
UP1
-V
UPC
, V
VP1
-V
VPC
V
WP1
-V
WPC
, V
N1
-V
NC
(Note-3)
Applied between : U
P
-V
UPC
, V
P
-V
VPC
, W
P
-V
WPC
U
N
• V
N
• W
N
• B
r
-V
NC
Using Application Circuit of Fig. 8
For IPM’s each input signals
(Fig. 7)
Recommended value
≤
400
15.0
±
1.5
≤
0.8
≥
9.0
≤
20
≥
2.0
Unit
V
V
V
kHz
µs
(Note-3) With ripple satisfying the following conditions: dv/dt swing
≤ ±5V/µs,
Variation
≤
2V peak to peak
≤ ±
5V/µs
≤
2V
15V
GND
May 2009
4
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75RL1B060
FLAT-BASE TYPE
INSULATED PACKAGE
PRECAUTIONS FOR TESTING
1. Before applying any control supply voltage (V
D
), the input terminals should be pulled up by resistors, etc. to their corre-
sponding supply voltage and each input signal should be kept off state.
After this, the specified ON and OFF level setting for each input signal should be done.
2. When performing “SC” tests, the turn-off surge voltage spike at the corresponding protection operation should not be al-
lowed to rise above V
CES
rating of the device.
(These test should not be done by using a curve tracer or its equivalent.)
P, (U,V,W,B)
IN
Fo
IN
Fo
P, (U,V,W,B)
V
CIN
(0V)
V
Ic
V
CIN
(15V)
V
–Ic
V
D
(all)
U,V,W,B, (N)
V
D
(all)
U,V,W,B, (N)
Fig. 1 V
CE(sat)
Test
Fig. 2 V
EC,
(
V
FM
)
Test
a) Lower Arm Switching
P
Fo
V
CIN
(15V)
V
CIN
Signal input
(Upper Arm)
Signal input
(Lower Arm)
Fo
trr
U,V,W
V
CE
Irr
Ic
90%
C
S
Vcc
90%
N
b) Upper Arm Switching
V
CIN
Signal input
(Upper Arm)
Signal input
(Lower Arm)
V
D
(all)
P
Ic
10%
tc(on)
V
CIN
10%
10%
tc(off)
10%
Fo
U,V,W
C
S
Vcc
td(on)
tr
td(off)
tf
V
CIN
(15V)
Fo
(ton = td(on) + tr)
N
(toff = td(off) + tf)
V
D
(all)
Ic
Fig. 3 Switching time and SC test circuit
Fig. 4 Switching time test waveform
V
CIN
Short Circuit Current
P, (U,V,W,B)
A
IN
Fo
Constant Current
SC Trip
Pulse
V
CE
V
CIN
(15V)
Ic
V
D
(all)
U,V,W,B, (N)
Fo
toff(SC)
Fig. 5 I
CES
Test
Fig. 6 SC test waveform
IPM’ input signal V
CIN
(Upper Arm)
0V
IPM’ input signal V
CIN
(Lower Arm)
1.5V
2V
1.5V
t
0V
2V
1.5V
2V
t
t
dead
t
dead
t
dead
1.5V: Input on threshold voltage Vth(on) typical value, 2V: Input off threshold voltage Vth(off) typical value
Fig. 7 Dead time measurement point example
May 2009
5
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