71V2558XSA133BQGI8 datasheet, PDF

71V2558XSA133BQGI8: DescriptionZBT SRAM, 256KX18, 4.2ns, CMOS, PBGA165; Categorystorage storage; File Size567KB，28 Pages; ManufacturerIDT (Integrated Device Technology); Environmental Compliance

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71V2558XSA133BQGI8 Overview

ZBT SRAM, 256KX18, 4.2ns, CMOS, PBGA165

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	IDT (Integrated Device Technology)
Reach Compliance Code	compliant
Maximum access time	4.2 ns
Maximum clock frequency (fCLK)	133 MHz
I/O type	COMMON
JESD-30 code	R-PBGA-B165
JESD-609 code	e1
memory density	4718592 bit
Memory IC Type	ZBT SRAM
memory width	18
Humidity sensitivity level	3
Number of terminals	165
word count	262144 words
character code	256000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	256KX18
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	BGA
Encapsulate equivalent code	BGA165,11X15,40
Package shape	RECTANGULAR
Package form	GRID ARRAY
Parallel/Serial	PARALLEL
power supply	3.3 V
Certification status	Not Qualified
Maximum standby current	0.045 A
Minimum standby current	3.14 V
Maximum slew rate	0.31 mA
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	BALL
Terminal pitch	1 mm
Terminal location	BOTTOM
Base Number Matches	1

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