D125S08 datasheet, PDF - EEWORLD Datasheet

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D125S08: DescriptionRectifier Diode, 1 Phase, 1 Element, 5A, 800V V(RRM), Silicon, DIE-1; CategoryDiscrete semiconductor diode; File Size88KB，2 Pages; ManufacturerVOLTAGE MULTIPLIERS INC.; Websitehttp://www.voltagemultipliers.com/

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D125S08 Overview

Rectifier Diode, 1 Phase, 1 Element, 5A, 800V V(RRM), Silicon, DIE-1

D125S08 Parametric

Parameter Name	Attribute value
Parts packaging code	DIE
package instruction	S-XUUC-N1
Contacts	1
Reach Compliance Code	compliant
ECCN code	EAR99
application	GENERAL PURPOSE
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.3 V
JESD-30 code	S-XUUC-N1
Maximum non-repetitive peak forward current	100 A
Number of components	1
Phase	1
Number of terminals	1
Maximum operating temperature	175 °C
Maximum output current	5 A
Package body material	UNSPECIFIED
Package shape	SQUARE
Package form	UNCASED CHIP
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	800 V
Maximum reverse recovery time	3 µs
surface mount	YES
Terminal form	NO LEAD
Terminal location	UPPER
Base Number Matches	1

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D125FF06 D125FF08 600 V - 1,000 V Rectifiers

D125F06 - D125F10

3.0 A - 4.0 A Forward Current

30 ns - 50 ns Recovery Time

ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS

Part Number

Working

Reverse

Voltage

(Vrwm)

55°C(1)

Volts

D125FF06

D125FF08

D125F06

D125F08

D125F10

Amps

Average

Rectified

Current

(Io)

100°C(2)

Amps

25°C

µA

Reverse

Current

@ Vrwm

(Ir)

100°C

µA

25°C

Volts

Forward

Voltage

1 Cycle Repetitive Reverse

Surge

Recovery

Current

Time

tp=8.3ms

(3)

(Ifsm)

(Ifrm)

(Trr)

25°C

Amps

25°C

Amps

25°C

ns

Thermal

Impd.

Junction

Cap.

@50VDC

@1kHz

(Cj)

25°C

pF

(Vf)

25°C

Amps

u

J-C

25°C

°C / W

600

800

600

800

1000

3.0

4.0

1.5

2.0

1.0

50

5.0

3.0

2.0

50

10

30

50

0.40

100

(1) TC=55°C (2)TC=100°C (3)If=0.5A, Ir=1.0A, Irr=0.25A

*Op. Temp.= -65°C to +175°C Stg. Temp.= -65°C to +200°C

Plating:

Option 1:

50µin gold over 50µin nickel.

Option 2:

50µin silver over 50µin nickel.

.110(2.79)

.028(.71)

.125(3.18)

.110(2.79)

.125(3.18)

ANODE

Scale: 4 : 1

CATHODE

Dimensions: In. (mm) • All temperatures are ambient unless otherwise noted. • Data subject to change without notice.

VOLTAGE MULTIPLIERS INC.

8711 W. Roosevelt Ave.

Visalia, CA 93291

TEL

559-651-1402

FAX

559-651-0740

www.voltagemultipliers.com

172

D125S08 Related Products

	D125S08	D125U08	D125U10	D125S10
Description	Rectifier Diode, 1 Phase, 1 Element, 5A, 800V V(RRM), Silicon, DIE-1	Rectifier Diode, 1 Phase, 1 Element, 5A, 800V V(RRM), Silicon, DIE-1	Rectifier Diode, 1 Phase, 1 Element, 5A, 1000V V(RRM), Silicon, DIE-1	Rectifier Diode, 1 Phase, 1 Element, 5A, 1000V V(RRM), Silicon, DIE-1
Parts packaging code	DIE	DIE	DIE	DIE
package instruction	S-XUUC-N1	S-XUUC-N1	S-XUUC-N1	S-XUUC-N1
Contacts	1	1	1	1
Reach Compliance Code	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99
application	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.3 V	1.7 V	2.4 V	1.5 V
JESD-30 code	S-XUUC-N1	S-XUUC-N1	S-XUUC-N1	S-XUUC-N1
Maximum non-repetitive peak forward current	100 A	100 A	100 A	100 A
Number of components	1	1	1	1
Phase	1	1	1	1
Number of terminals	1	1	1	1
Maximum output current	5 A	5 A	5 A	5 A
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Package shape	SQUARE	SQUARE	SQUARE	SQUARE
Package form	UNCASED CHIP	UNCASED CHIP	UNCASED CHIP	UNCASED CHIP
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	800 V	800 V	1000 V	1000 V
Maximum reverse recovery time	3 µs	0.07 µs	0.07 µs	3 µs
surface mount	YES	YES	YES	YES
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	UPPER	UPPER	UPPER	UPPER
Base Number Matches	1	1	1	-

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