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SMB850DR-3100-I

Description
INFRARED LED
CategoryLED optoelectronic/LED    photoelectric   
File Size209KB,6 Pages
ManufacturerEpitex Inc
Websitehttp://www.epitex.com
Download Datasheet Parametric View All

SMB850DR-3100-I Overview

INFRARED LED

SMB850DR-3100-I Parametric

Parameter NameAttribute value
Reach Compliance Codeunknown
Optoelectronic device typesINFRARED LED
Base Number Matches1
epitex

Opto-Device & Custom LED
High Power Top LED SMB850DR-3100-I
Lead ( Pb ) Free Product – RoHS Compliant
SMB850DR-3100-I
Specifications
1) Product Name
2) Type No.
3) Chip
(1) Chip Material
(2) Chip Dimension
(3) Chip Number
(4) Peak Wavelength
4) Package
(1) Lead Frame Die
(2) Insulator
(3)
Package Resin
(4)
Lens
High Power Top LED
SMB850DR-3100-I is an AlGaAs LED mounted on copper heat sink with a 5*5 mm package.
These devices are available to be operated and 26000mW/sr at IFP=3A.
Outer
dimension (Unit: mm)
High Power Top LED
SMB850DR-3100-I
AlGaAs
1000um*1000um
3pce
850nm typ.
Silver Plated on Copper
AlN ceramics
PPA Resin
Silicone Resin
c1 c2 c3
anode
a1 a2 a3
heat sink
c1 c2 c3
cathode
land pattern for solder
a1 a2 a3
Absolute
Maximum Ratings [Ta=25°C]
Item
Symbol
Power Dissipation
P
D
Forward Current
I
F
Pulse Forward Current
I
FP
Reverse Voltage
V
R
Thermal Resistance
R
thja
Junction Temperature
T
j
Operating Temperature
T
OPR
Storage Temperature
T
STG
Soldering Temperature
T
SOL
Maximum Rated Value
7500
1000
3000
15
6
135
-40 ~ +125
-40 ~ +125
250
Unit
mW
mA
mA
V
K/W
°C
°C
°C
°C
‡Pulse Forward Current condition: Duty=1% and Pulse Width=10us.
‡Soldering condition: Soldering condition must be completed within 5 seconds at 250°C
Electro-Optical
Characteristics [Ta=25°C typ.]
Item
Symbol Condition
V
F
I
F
=1A
Forward Voltage
V
FP
I
FP
=3A
I
F
=1A
Radiated Power
P
O
I
FP
=3A
I
F
=1A
Radiant Intensity
I
E
I
FP
=3A
Peak Wavelength
P
I
F
=1A
Half Width

I
F
=1A
Viewing Half Angle


I
F
=100mA
Rise Time
tr
I
F
=1A
Fall Time
tf
I
F
=1A
‡Radiated Power is measured by S3584-08.
‡Radiant Intensity is measured by Tektronix J-6512.
Minimum
1100
Typical
6.0
8.9
1500
4200
9300
26000
850
41
±60
35
40
Maximum
7.5
Unit
V
V
mW
mW
mW/sr
mW/sr
nm
nm
deg.
ns
ns
EPITEX INC.: 66-3 Minami-Kawabe Cho, Higashi-Kujyo, Minami-Ku, Kyoto, Japan
Tel: ++81-75-682-2338
Fax: ++81-75-682-2267
e-mail : sales-dep@epitex.com
http://www.epitex.com/
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