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TDTC114E,LM(T

Description
Small Signal Bipolar Transistor
CategoryDiscrete semiconductor    The transistor   
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

TDTC114E,LM(T Overview

Small Signal Bipolar Transistor

TDTC114E,LM(T Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknown
Base Number Matches1
TDTC114E
Bipolar Transistors
Silicon NPN Epitaxial Type
TDTC114E
1. Applications
Switching
Inverter Circuits
Driver Circuits
2. Features
(1)
(2)
(3)
The integrated bias resistor reduces the number of external parts required, making it possible to reduce
system size and assembly time.
Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs.
Complementary to TDTA114E
3. Packaging and Internal Circuit
1: IN (Base)
2: GND (Emitter)
3: OUT (Collector)
SOT23
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
a
= 25
)
Characteristics
Supply voltage
Output current
Power dissipation
Junction temperature
Storage temperature
Symbol
V
CC
I
O
P
D
T
j
T
stg
Rating
50
100
320
150
-55 to 150
Unit
V
mA
mW
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
©2016-2019
Toshiba Electronic Devices & Storage Corporation
1
2016-02
2019-03-06
Rev.3.0
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